共查询到20条相似文献,搜索用时 46 毫秒
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CHENG Xing-hua QIAO Liang BI Xiao-fang* School of Materials Science Engineering Beijing University of Aeronautics Astronautics Beijing China 《中国航空学报》2006,19(Z1)
In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 (BTO) ferroelectric thin films, highly (100)-oriented LaNiO3 (LNO) thin films of different thicknesses were deposited directly on Si (100) substrate with radio-frequency (RF) magnetron sputtering method. It is observed that the substrate temperatures and the film thicknesses bring main influences on the micro-structures and orientation of the thin film. The effects of the thicknesses and substrate temperatures on the orientation of the films were studied on the LNO films of different thicknesses. The highly (100)-oriented LNO thin films were obtained at the substrate temperature of 600 ℃. The existence of epitaxially grown BTO films indicates that the oriented LNO thin films obtained in this work could be used as a buffer layer for epitaxial growth. 相似文献
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LU Wan-bing* YU Wei WU Li-ping CUI Shuang-kui FU Guang-sheng College of Physics Science Technology Hebei University Baoding China 《中国航空学报》2006,19(Z1)
Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the heli-con wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared ab-sorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmis-sion electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals. 相似文献
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Diamond-like carbon (DLC) films are deposited by the Hall ion source assisted by the mid-frequency unbalanced magnetron sput-tering technique. The effects of the substrate voltage bias, the substrate temperature, the Hall discharging current and the argon/nitrogen ratio on the DLC film’s performance were studied. The experimental results show that the film’s surface roughness, the hardness and the Young’s modulus increase firstly and then decrease with the bias voltage incrementally increases. Also when the substrate temperature rises, the surface roughness of the film varies slightly, but its hardness and Young’s modulus firstly increase followed by a sharp decrease when the temperature surpassing 120 ℃. With the Hall discharging current incrementally rising, the hardness and Young’s modulus of the film decrease and the surface roughness of the film on 316L stainless steel firstly decreased and then remains constant. 相似文献
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YU Wei* LU Xue-qin LU Wan-bing HAN Li FU Guang-sheng College of Physics Science Technology Hebei University Baoding China 《中国航空学报》2006,19(Z1)
Nanocrystalline (nc) 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposi-tion (HW-PECVD) technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence (PL) character-istics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wave-length, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the ap-pearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films. 相似文献
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LIU Fa-min DING Peng SHI Wei-mei WANG Tian-min 《中国航空学报》2007,20(2):162-167
The TiO2-Co-TiO2 sandwich films were successfully grown on glass and silicon substrata making alternate use of radio frequency reactive magnetron sputtering and direct current magnetron sputtering. The structures and properties of these films were identified with X-ray diffraction (XRD), Raman spectra and X-ray photoemission spectra (XPS). It is shown that the sandwich film consists of two anatase TiO2 films with an embedded Co nano-film. The fact that, when the Co nano-film thickens, varied red shifts appear in optical absorption spectra may well be explained by the quantum confinement and tunnel effects. As for magnetic properties, the saturation magnetization, remnant magnetic induction and coercivity vary with the thickness of the Co nano-films. Moreover, the Co nano-film has a critical thickness of about 8.6 nm, which makes the coercivity of the composite film reach the maximum of about 1413 Oe. 相似文献
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射频磁控溅射Cr/CrN膜微结构和力学性能研究 总被引:1,自引:0,他引:1
利用射频磁控溅射制备了Cr/CrN多层薄膜,并对比单层CrN薄膜,分析研究了多层膜周期与结构和性能之间的关系。研究结果表明:多层膜中没有出现柱状晶体结构,而且结晶取向与单层CrN有显著区别;多层膜的应力普遍小于单层CrN,硬度略高于或接近于单层CrN,在外力作用下的抗变形能力远高于单层CrN;多层膜的应力和硬度随周期厚度的减小而增大,在周期15nm时硬度值达到最大23、8GPa,表明Cr/CrN多层膜的硬度与周期结果有关,而且存在使薄膜性能达到最佳的周期值。 相似文献
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采用反应溅射和后续退火工艺,在石英衬底上制备具有热致相变特性的VO_2薄膜,并对薄膜的光学性能进行表征。研究发现:在弱光辐射下,随着温度的改变,薄膜的透射率在可见及近红外光区会发生显著变化,具有良好的相变光开关特性;在强光辐射下,制备的VO_2薄膜同样具有良好的红外光调制深度;当脉冲激光波长为1064 nm时,随着脉冲能量的逐渐增强,薄膜的表面反射率逐渐降低,光限幅性能呈现出先升高再降低的趋势,其透射率最低可降至7%,薄膜的脉冲激光损伤阈值约为50 mJ/cm~2。 相似文献
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采用磁过滤直流真空阴极弧沉积技术在硅片、不锈钢片基体上制备了类金刚石(DLC)膜。检测结果表明,膜中存在着微米级的大颗粒分布,膜厚为290nm,sp3键的含量为62.23%。所制备的薄膜具有典型的DLC膜Raman光谱特征,耐磨性能优良,膜与基体的结合性能良好。 相似文献
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飞行器以高超声速飞行时瞬间温升可达1 600℃以上,为了保证飞行器的可靠和运行安全,准确实时测量热防护系统表面温度显得尤为重要。针对高温环境实时测温的技术难题,结合磁控溅射技术和陶瓷烧结技术,提出了一种引线和传感器基底一体化的微小型高温薄膜温度传感器结构。采用高温检定炉对传感器陶瓷基底的高温绝缘性进行了测试,并使用多种微观形貌表征方法对传感器主要结构材料进行筛选,得到薄膜温度传感器制备所需的最佳材料组合。进行了薄膜温度传感器静态标定和综合性能高温考核试验,结果表明,所研制传感器灵敏度、重复性的变化与标准热电偶基本保持一致,在实际环境温度低于1 500℃时,传感器测量误差不超过4‰,可在1 200℃高温环境中连续准确测温6 h以上,且测温上限高达1 800℃,验证了该传感器在高温环境中进行测温的可行性和实用性,为航天器表面温度测量和热防护系统优化提供科学依据。 相似文献
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利用阴极溅射方法在铝合金表面沉积氮化铝薄膜,利用X射线研究了沉积过程中气体压力的变化对氮化铝薄膜结晶的择优取向及薄膜内应力的影响。结果表明:在较低压力沉积的氮化铝薄膜有良好的择优取向性;氮化铝薄膜残余应力为压应力,且随气体压力增加而逐渐变化。 相似文献
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薄膜生长工艺对TiO_2基紫外探测器光电性能的影响 总被引:1,自引:1,他引:1
分别采用磁控溅射和溶胶-凝胶工艺制备了相同厚度的TiO2薄膜,并用以制备了金属-半导体-金属(MSM)结构TiO2基紫外探测器。通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了TiO2薄膜生长工艺对探测器光电性能的影响规律。结果表明:磁控溅射工艺下,探测器的光电流虽然较低,但响应时间和暗电流远小于溶胶-凝胶工艺制备的探测器,其具备了高辐射灵敏度和快速响应特性。磁控溅射工艺制备的TiO2薄膜结构较为致密,晶界和缺陷较少,方阻较高,这是其取得优良的光电特性的原因。 相似文献
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以光学滤光片薄膜边缘应力作为对象,研究了Ge/Zn S单、多层光学薄膜应力的变化规律。通过实验研究了离子束轰击能量以及真空退火温度等因素对Ge/Zn S光学薄膜应力类型、大小、变化及其分布的影响规律。Zn S薄膜的应力为压应力,采用离子束辅助工艺后薄膜边缘应力变得均匀;真空退火使Zn S薄膜的应力减小为原来的一半。通过优化沉积参数和张应力、压应力薄膜的组合降低了Ge/Zn S多层光学薄膜的应力,结果表明其平均应力分别为0.1 MPa,而且处于压应力状态。 相似文献
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TiNi基形状记忆合金薄膜的相变特征研究 总被引:2,自引:0,他引:2
利用磁控溅射的方法在单晶Si和非晶SiO2基片上制备了TiNi和TiNiCu形状记忆合金薄膜,并利用示差扫描量热法和基片曲率法研究了薄膜的相变特征及应力随温度的变化.研究结果表明450℃溅射形成的记忆合金薄膜具有良好的形状记忆效应,在微电子机械系统有很好的应用前景.TiNi薄膜降温时出现R相变,因而发生两步相变,而TiNiCu薄膜中马氏体和奥氏体间直接转变.基片以及薄膜成份对相变点有很大的影响.单晶Si片作为基片时,记忆合金薄膜和基片间有很好的结合力,而SiO2作为基片时,记忆合金薄膜容易剥落. 相似文献
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West W.C. Whitacre J.F. Brandon E.J. Ratnakumar B.V. 《Aerospace and Electronic Systems Magazine, IEEE》2001,16(8):31-33
Recent successes in the effort to miniaturize spacecraft components using MEMS technology, integrated passive components, and low power electronics have driven the need for very low power, low profile, low mass micro-power sources for micro/nanospacecraft applications. Recent work at JPL has focused upon developing thin film/micro-batteries compatible with temperature sensitive substrates. A process to prepare crystalline LiCoO2 films with RF sputtering and moderate (<700°C) annealing temperature has been developed. Thin film batteries with cathode films prepared with this process have specific capacities approaching the practical limit for LiCoO2, with acceptable rate capabilities and discharge voltage profiles. Solid-state micro-scale batteries have also been fabricated with feature sizes on the order of 50 microns 相似文献