Photoluminescence Properties of Nanocrystalline 3C-SiC Films

Nanocrystalline (nc) 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposi-tion (HW-PECVD) technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence (PL) character-istics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wave-length, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the ap-pearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films.     

Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films

Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substrate temperatures ranging from –50 ℃ to 600 ℃. X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) were employed to characterize their phase com- ponents, microstructures, grain sizes and surface morphology. Optical properties inclusive of refractive indexes, extinction coefficients and transmittance of the NbN films under different sputtering conditions were measured. With the increase in the N2 partial pressure, δ-NbN phase structure gets forming and the grain size and lattice constant of the cubic NbN increasing. The deposited NbN film has relatively high values of refractive index and extinction coefficient in the wavelength ranging from 240 nm to 830 nm. Substrate tem- perature exerts notable influences on the microstructure and optical transmittance of the NbN films. The grain sizes of the δ-NbN film remarkably increase with the rise of the substrate temperature, while the transmittance of the films with the same thickness decreases. Ultra-fine granular film with particle size of several nanometers forms when the substrate is cooled to –50 ℃, and a remarkable aug- mentation of transmittance could be noticed under so low a temperature.     

Preparation and Microstructure of Highly-Oriented LaNiO_3 Thin Films by RF Sputtering Method

In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 (BTO) ferroelectric thin films, highly (100)-oriented LaNiO3 (LNO) thin films of different thicknesses were deposited directly on Si (100) substrate with radio-frequency (RF) magnetron sputtering method. It is observed that the substrate temperatures and the film thicknesses bring main influences on the micro-structures and orientation of the thin film. The effects of the thicknesses and substrate temperatures on the orientation of the films were studied on the LNO films of different thicknesses. The highly (100)-oriented LNO thin films were obtained at the substrate temperature of 600 ℃. The existence of epitaxially grown BTO films indicates that the oriented LNO thin films obtained in this work could be used as a buffer layer for epitaxial growth.     

沉积温度对碳芯SiC 纤维微观结构的影响

以沥青基碳单丝为基体,一甲基三氯硅烷为碳化硅前驱体,使用通电加热的冷壁CVD工艺,温度在1 473～1 773 K,制备了碳芯SiC纤维.采用扫描电子显微镜和拉曼光谱对纤维的表面形貌及结构进行了表征,研究了沉积温度对其结构的影响.结果表明,SiC涂层为β-SiC晶型.沉积温度的升高引起了沉积速率的增加以及SiC涂层晶粒尺寸的长大.同时,导致碳芯中心区域发生结构重排,引起了该区域取向度的提高以及晶粒尺寸的减小.     

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the micro-structures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hy-drogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.     

磁过滤直流真空阴极弧制备类金刚石膜的结构和力学性能研究

采用磁过滤直流真空阴极弧沉积技术在硅片、不锈钢片基体上制备了类金刚石(DLC)膜。检测结果表明,膜中存在着微米级的大颗粒分布,膜厚为290nm,sp3键的含量为62.23%。所制备的薄膜具有典型的DLC膜Raman光谱特征,耐磨性能优良,膜与基体的结合性能良好。     

CVD-SiC反射镜制备过程中热应力变形的研究

采用CVD工艺在反应烧结碳化硅(RB-SiC)反射镜坯体上沉积了一层致密的碳化硅薄膜作为反射镜镜面.CVD-SiC和RB-SiC热物理性能上的差异引起的热残余应力和热变形,在很大程度上影响反射镜的质量,本文采用有限单元法计算了沉积过程中反射镜的温度场、应力场和热变形,采用X射线衍射方法测试了薄膜表面的残余应力.分析结果表明,薄膜存在较大的残余应力,包括热应力和本征应力,两者量值相当,热变形很小.     

沉积含Si过渡层对于不锈钢上沉积的DLC薄膜的性能影响

本文介绍了采用RF-PECVD法在3Cr13不锈钢基体圆片上沉积制备类金刚石多层膜,其内层薄膜为掺Si的过渡层,外层为不同厚度的在50～1000 nm之间的类金刚石薄膜（DLC）。实验结果表明沉积过渡层可以有效提高薄膜与基体的结合力。类金刚石薄膜的摩擦系数和薄膜在摩擦过程中的损坏情况都与外层薄膜的厚度有关。     

热障涂层杨氏模量和泊松比的测试

为了降低航空发动机热端部件的温度,空气等离子喷涂已被广泛地应用。为确定热障涂层的残余应力、结合力、断裂韧性、疲劳裂纹扩展速率等性能和特性,需要知道其杨氏模量和泊松比。因为涂层厚度非常薄且使用时是结合在基体上的,所以需要一个能够在原处测量涂层的杨氏模量和泊松比的方法。采用等离子喷涂工艺在GH150高温合金上喷涂了MCrAIY和陶瓷层,利用一种改进的悬臂梁方法测量了热障涂层的杨氏模量和泊松比。这种无损测试方法为测定其他薄膜材料的杨氏模量和泊松比提供了借鉴。     

一种用于电子薄膜导热系数和发射率测量的实验方案

薄膜传热性能对微电子设备的传热能力及其性能和可靠性有重大影响,测量薄膜的热物性参数并进一步研究其影响因素,可为微电子电路的设计和发展提供科学依据。评述了薄膜导热系数测量和研究的现状,在此基础上提出了一种新的能同时测量衬底薄膜导热系数和发射率的实验方案,并通过建立衬底薄膜试样传热的数学模型和分析推导,论证了该实验方案的可行性。本实验方案可推广应用于确定淀积在衬底薄膜上各种极小厚度薄膜的导热系数和发射率。     

常压化学气相沉积SiC的组织结构及其稳定性

研究了CH3SiCl3-H2-Ar体系在常压条件下化学气相沉积SiC的组织结构及其高温稳定性。在一定沉积温度下,沉积物的形貌由H2流量所控制;而在H2流量一定的条件下,随着沉积温度的提高,沉积物的晶粒尺寸和致密度增加。本实验所得到的沉积物均为纳米级β-SiC,经高温热处理后发生明显的晶粒长大现象。     

IBAD法沉积TiN薄膜的机械和耐腐性

用离子束辅助沉积(IBAD)方法在医用不锈钢317L基底上沉积TiN陶瓷薄膜。通过X射线衍射(XRD)和俄歇电子能谱(AES)分析研究了薄膜的微结构；测试了薄膜的耐磨性及薄膜与基底的附着力：运用电化学腐蚀的方法检测了薄膜在Hank’s模拟体液中的耐腐蚀性能。研究结果表明：用高、低能氮离子束兼用的IBAD方法沉积TiN多晶薄膜后，材料表面结构和性能发生明显改变。表面硬度和耐磨性有明显提高，在Hank’s模拟体液中显示出更强的抗腐蚀能力。     

离子束辅助沉积WS_2-Ti-Ag复合薄膜的摩擦性能

采用ZDH-100型号离子束复合沉积设备沉积WS_2-Ti-Ag复合薄膜,基材为轴承钢和单晶硅(100).采用场发射扫描电子显微镜、XRD衍射仪,检测复合薄膜的表面形貌、微观结构.采用球-盘式摩擦磨损试验机,对复合薄膜在大气环境中的摩擦性能进行了研究.结果表明:采用离子束辅助沉积技术制备的WS_2-Ti-Ag复合薄膜是非晶态薄膜;并且随法向载荷的增加,复合薄膜的摩擦因数减小,摩擦状态越稳定,耐磨寿命越短.     

赝火花脉冲电子束烧蚀制备纳米薄膜

类似于脉冲激光束烧蚀法制备薄膜 ,利用纳秒赝火花脉冲电子束与靶材料相互作用 ,通过靶材料的瞬间熔化、蒸发或以团簇抛出的方式 ,在低温衬底上重新成核、凝结 ,得到了与靶材的化学计量比相同的薄膜。讨论了材料烧蚀和沉积过程中出现的诸多现象 ,并给出高分辨电子显微镜、X射线衍射、光电子能谱分析等方法的测试结果。研究表明 ,由于赝火花脉冲电子束高功率密度 (10 9W cm2 )的瞬态烧蚀作用 ,为研究和制备多元素氧化物薄膜、难熔金属多层膜或氧化物 金属多层膜提供了一种新手段     

SiC 抗氧化机制电弧加热试验

介绍了在电弧加热器上进行的SiC的抗氧化机制研究试验,根据SiC的主动、被动氧化机制,调试出相应试验条件并进行了模型试验.结果表明,SiC在一定的氧分压环境中,表面温度低于转捩温度时,会在表面形成SiO2薄膜,阻止氧向防热层内部扩散,降低了碳同氧的反应程度,阻止了基体碳的烧蚀;当表面温度高于转捩温度时材料发生主动氧化,材料表面发生烧蚀.     

Combustion Synthesis of h-BN-SiC Ceramic Composites

The feasibility was demonstrated to fabricate h-BN-SiC ceramics through combustion synthesis of the mixture of boron carbide and silicon powders under 100 MPa nitrogen pressure. The mass fraction of BN and SiC in the combustion products were found to be 72 % and 28 % respectively. The thermodynamics of the synthesis reaction and the adiabatic combustion temperature were calculated on the theoretical ground. The bending strengths of the ceramics were measured to be 65.2 MPa at room temperature and 55 MPa at 1350 ℃. The phase composition and microstructure of the combustion products were identified by X-ray diffraction (XRD) and scanning electron microscopy (SEM).     

可见光迷彩低红外发射率薄膜制备及其特性

采用多弧离子镀技术,在Al基底上制备了TiO2/TiN多层膜。通过控制基底材料的粗糙度使制备出的薄膜在可见波段具有非镜面反射效果。采用扫描电镜、红外辐射率测量仪、紫外-可见-近红外光光度计等测试手段对薄膜样品进行了表征。结果表明,采用多弧离子镀法在Al基底上制备了结合力良好、具有迷彩效果的低红外发射率薄膜。研究发现,随氧化层厚度增加,薄膜发射率趋向稳定(0.2左右)。薄膜电阻随氧化层厚度的变化无明显变化。     

Fabrication of Diamond-like Carbon Films by Ion Assisted Middle Frequency Unbalanced Magnetron Sputtering

Diamond-like carbon (DLC) films are deposited by the Hall ion source assisted by the mid-frequency unbalanced magnetron sput-tering technique. The effects of the substrate voltage bias, the substrate temperature, the Hall discharging current and the argon/nitrogen ratio on the DLC film’s performance were studied. The experimental results show that the film’s surface roughness, the hardness and the Young’s modulus increase firstly and then decrease with the bias voltage incrementally increases. Also when the substrate temperature rises, the surface roughness of the film varies slightly, but its hardness and Young’s modulus firstly increase followed by a sharp decrease when the temperature surpassing 120 ℃. With the Hall discharging current incrementally rising, the hardness and Young’s modulus of the film decrease and the surface roughness of the film on 316L stainless steel firstly decreased and then remains constant.     

Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films

作为一种功能薄膜,透明导电氧化物(TCO)薄膜在飞行器的抗原子氧(AO)涂层和太阳能电池领域有着巨大的应用价值。ZnO:Al(ZAO)和In2O3:Sn(ITO)薄膜是目前研究和应用最广泛的TCO。本文对ITO薄膜和ZAO薄膜进行了不同通量的AO辐照。通过对辐照前后样品的X射线衍射、扫描电镜及霍耳效应的表征及测试,研究了AO辐照对这两种TCO薄膜的结构、性能及电学特性的影响。研究表明AO辐照对ZAO薄膜表面有明显的侵蚀作用,但对其结构和导电性能没有明显影响。对于ITO薄膜,随着AO通量的增大,其载流子浓度逐渐下降从而导致了电阻率的提高,电阻率的最大变化达到了21.7%。     

多弧离子镀Cr/Cr2O3薄膜红外及可见光谱特性

采用多弧离子镀制备了具有不同色彩的Cr/Cr2O3薄膜,利用紫外-可见光分光光度计研究了薄膜在可见和红外波段的光谱特性,利用SEM进行薄膜表面结构和形貌的分析,利用四探针测阻仪测试了样品的方块电阻,利用红外发射率测量仪测试了样品的红外发射率。结果表明:Cr/Cr2O3薄膜具有丰富的色彩,在可见光区有明显的反射峰,可见光区光谱特性主要受膜厚的影响,方块电阻随膜厚增加而有变大,样品的红外发射率主要取决于金属层,平均红外发射率最小降至0.371。