Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films

Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substrate temperatures ranging from –50 ℃ to 600 ℃. X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) were employed to characterize their phase com- ponents, microstructures, grain sizes and surface morphology. Optical properties inclusive of refractive indexes, extinction coefficients and transmittance of the NbN films under different sputtering conditions were measured. With the increase in the N2 partial pressure, δ-NbN phase structure gets forming and the grain size and lattice constant of the cubic NbN increasing. The deposited NbN film has relatively high values of refractive index and extinction coefficient in the wavelength ranging from 240 nm to 830 nm. Substrate tem- perature exerts notable influences on the microstructure and optical transmittance of the NbN films. The grain sizes of the δ-NbN film remarkably increase with the rise of the substrate temperature, while the transmittance of the films with the same thickness decreases. Ultra-fine granular film with particle size of several nanometers forms when the substrate is cooled to –50 ℃, and a remarkable aug- mentation of transmittance could be noticed under so low a temperature.     

光学滤光片薄膜边缘应力研究

以光学滤光片薄膜边缘应力作为对象,研究了Ge/Zn S单、多层光学薄膜应力的变化规律。通过实验研究了离子束轰击能量以及真空退火温度等因素对Ge/Zn S光学薄膜应力类型、大小、变化及其分布的影响规律。Zn S薄膜的应力为压应力,采用离子束辅助工艺后薄膜边缘应力变得均匀;真空退火使Zn S薄膜的应力减小为原来的一半。通过优化沉积参数和张应力、压应力薄膜的组合降低了Ge/Zn S多层光学薄膜的应力,结果表明其平均应力分别为0.1 MPa,而且处于压应力状态。     

Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the heli-con wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared ab-sorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmis-sion electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.     

Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films

作为一种功能薄膜,透明导电氧化物(TCO)薄膜在飞行器的抗原子氧(AO)涂层和太阳能电池领域有着巨大的应用价值。ZnO:Al(ZAO)和In2O3:Sn(ITO)薄膜是目前研究和应用最广泛的TCO。本文对ITO薄膜和ZAO薄膜进行了不同通量的AO辐照。通过对辐照前后样品的X射线衍射、扫描电镜及霍耳效应的表征及测试,研究了AO辐照对这两种TCO薄膜的结构、性能及电学特性的影响。研究表明AO辐照对ZAO薄膜表面有明显的侵蚀作用,但对其结构和导电性能没有明显影响。对于ITO薄膜,随着AO通量的增大,其载流子浓度逐渐下降从而导致了电阻率的提高,电阻率的最大变化达到了21.7%。     

Study on the Microstructure and Dielectric Properties of Barium Strontium Titanate Thin Films Prepared by Sol-gel Method

Sr0.5Ba0.5–xBixTiO3 (BST) thin films were fabricated on a Pt/SiO2/Si substrate by the sol-gel method. Then follows an investigation of the influences of bismuth (Bi) on the microstructures and the dielectric properties of Sr0.5Ba0.5-xBixTiO3 (BST) thin films. The micro-structures of the BST thin films were examined by the XRD and the TEM techniques. Tetragonal perovskite crystal grains were observed in BST thin films. Increasing Bi3 doping ration in BST will lead to decrease of the grain size. It is found that Bi3 doping decreases the dielectric loss and improves the frequency dispersion of the BST thin films. Not only is compressed the peak of temperature-dependence of dielectric constant of Bi3 -doped BST thin films but also moves into the low-temperature region. Moreover, the average Curie tem-perature decreases gradually with the Bi3 contents increasing.     

TiNi基形状记忆合金薄膜的相变特征研究

利用磁控溅射的方法在单晶Si和非晶SiO2基片上制备了TiNi和TiNiCu形状记忆合金薄膜,并利用示差扫描量热法和基片曲率法研究了薄膜的相变特征及应力随温度的变化.研究结果表明450℃溅射形成的记忆合金薄膜具有良好的形状记忆效应,在微电子机械系统有很好的应用前景.TiNi薄膜降温时出现R相变,因而发生两步相变,而TiNiCu薄膜中马氏体和奥氏体间直接转变.基片以及薄膜成份对相变点有很大的影响.单晶Si片作为基片时,记忆合金薄膜和基片间有很好的结合力,而SiO2作为基片时,记忆合金薄膜容易剥落.     

材料表面薄膜硬度的测试计算

给出了基于纳米硬度试验的表层薄膜的硬度测算方法。首先研究如何利用有限元计算弥补纳米硬度测量在压痕深度小于百纳米时的精度缺陷，进而探讨薄膜一基体材料系统的硬度随压痕深度变化的规律，最后导出了根据实验曲线预测表层薄膜材料的硬度的公式，并进行了实验验证。     

Photoluminescence Properties of Nanocrystalline 3C-SiC Films

Nanocrystalline (nc) 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposi-tion (HW-PECVD) technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence (PL) character-istics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wave-length, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the ap-pearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films.     

材料表面两层薄膜硬度的测试计算

给出了基于纳米硬度试验的二层薄膜的硬度测算方法。首先利用有限元方法探讨了二层薄膜一基体材料系统的硬度随压痕深度变化的规律，进而推导和验证了材料系统硬度一位移曲线的拟合公式，最后给出了以压痕实验为基础的二层薄膜材料硬度的计算公式。     

磁过滤直流真空阴极弧制备类金刚石膜的结构和力学性能研究

采用磁过滤直流真空阴极弧沉积技术在硅片、不锈钢片基体上制备了类金刚石(DLC)膜。检测结果表明,膜中存在着微米级的大颗粒分布,膜厚为290nm,sp3键的含量为62.23%。所制备的薄膜具有典型的DLC膜Raman光谱特征,耐磨性能优良,膜与基体的结合性能良好。     

一种用于电子薄膜导热系数和发射率测量的实验方案

薄膜传热性能对微电子设备的传热能力及其性能和可靠性有重大影响,测量薄膜的热物性参数并进一步研究其影响因素,可为微电子电路的设计和发展提供科学依据。评述了薄膜导热系数测量和研究的现状,在此基础上提出了一种新的能同时测量衬底薄膜导热系数和发射率的实验方案,并通过建立衬底薄膜试样传热的数学模型和分析推导,论证了该实验方案的可行性。本实验方案可推广应用于确定淀积在衬底薄膜上各种极小厚度薄膜的导热系数和发射率。     

工艺参数对2A12铝合金微弧氧化陶瓷层生长的影响

研究了正／负向电流密度、频率和正／负向占空比对铝合金微弧氧化陶瓷层生长的影响,采用扫描电子显微镜（SEM）和X射线衍射仪（XRD）,分析了不同氧化时间陶瓷层表面和截面形貌、成分和相组成,讨论了陶瓷层的生长过程。研究表明,正／负向电流密度相同时,随电流密度的增加膜层厚度增大;而当正向电流密度相同时,负向电流密度增加有利于膜层的生长;成膜速率随脉冲频率和负向占空比增加,均呈现先增大后减小的趋势;陶瓷层总厚度随氧化时间接近于线性增长,致密层占总膜层的比例先快速增加,其后略微下降。SEM结果显示,随氧化时间延长,样品表面膜厚度趋于均匀,界面处氧化膜变得比较平坦。陶瓷层主要由α—Al2O3和γ-Al2O3相组成,随氧化时间的延长,γ-Al2O3相在陶瓷层中的相对含量逐渐减少。而α-Al2O3相的含量逐渐提高。     

热障涂层结合强度及失效模式研究

采用实验方法研究了热障涂层的结合强度,并探讨了温度、氧化时间、涂层厚度以及基体等因素对结合强度的影响。涂层采用了等离子和EB-PVD两种喷涂工艺,采用双向测试法,分析了粘结层氧化对涂层法向和切向结合强度的影响,研究结果表明同一种喷涂工艺方法,尽管涂层厚度不同,但其结合强度是非常接近的,为带涂层航空发动机部件的强度设计和分析以及涂层失效模型的建立提供的参考。      

飞机座舱复合玻璃电磁性能和透光性能研究

 研究了电磁性能 ,如电磁波后向散射功率、吸收功率以及反射功率与透明导电膜的内在关系 ;研究透光性能 ,如光学膜系的优化设计等。提出了透明导电膜与多层玻璃合理组合以提高电磁性能 ;薄金属膜与多层光学膜合理匹配以提高透光率。采用溅射和蒸发镀膜方法分别实现了上述优化设计的光学膜系结构 ,并与多层玻璃合理层合后 ,斜入射电磁后向散射功率下降 1 0 d B,透光率可达到 77%。     

沉积含Si过渡层对于不锈钢上沉积的DLC薄膜的性能影响

本文介绍了采用RF-PECVD法在3Cr13不锈钢基体圆片上沉积制备类金刚石多层膜,其内层薄膜为掺Si的过渡层,外层为不同厚度的在50～1000 nm之间的类金刚石薄膜（DLC）。实验结果表明沉积过渡层可以有效提高薄膜与基体的结合力。类金刚石薄膜的摩擦系数和薄膜在摩擦过程中的损坏情况都与外层薄膜的厚度有关。     

厚液膜敞口型离心喷嘴动力学特性试验

为了解补燃循环液氧煤油发动机预燃室煤油离心喷嘴的动力学特性,开展了厚液膜敞口型离心喷嘴动力学响应特性试验研究。使用水为工作介质,通过改变喷嘴切向孔直径实现了旋流腔液膜厚度改变,通过脉动发生装置在喷嘴上游的供应管路上产生流量和压力振荡。使用脉动压力传感器记录了喷前压力的振荡特性,使用高速相机记录了旋流腔内流过程和喷注雾化的响应特性。研究发现：当扰动波较长时,旋流腔内液膜的厚度和喷嘴的喷雾角均周期性变化,厚液膜和薄液膜喷嘴内流过程对扰动波的动力学响应特性差别不大;随着扰动波长缩短,旋流腔内液膜局部"缩口","缩口"向下游传播并使喷雾过程出现Klystron效应;当扰动波较短时,相较于薄液膜喷嘴,厚液膜喷嘴旋流腔内流动过程对扰动波的耗散作用较弱,但厚液膜喷嘴的雾化过程对外加扰动始终不敏感。     

飞机座舱有机玻璃透明导电膜的制备及透光和微波散射性能

研究了用溅射法在飞机座舱有机玻璃上镀制金属-介质组合透明导电膜的工艺 ;测试和分析了金膜、银膜、氧化钛膜的光学特性、导电性及形貌结构 ;按薄膜光学原理进行膜系匹计算 ,并分别镀制了 Ti O2-Au-Ti O2 、 Ti O2-Ag-Ti O2 组合透明导电膜。在 40 0～ 760 nm可见光波段内 ,透光率分别达到了 74%和 81 % ,在 8～ 1 2 GHz频段内对垂直入射的微波 ,反射率分别达到-1 .1 d B和-0 .8d B。     

过滤式阴极电弧沉积类金刚石薄膜的特性分析

利用自行研制的过滤式阴极电弧沉积装置,在硅片和高速钢基体材料上获得了类金刚石薄膜,分别采用扫描电镜、原子力显微镜、喇曼光谱以及磨损实验等手段对薄膜进行了分析研究。结果表明,所获得的类金刚石薄膜为非晶态,sp3含量最高达70%;基体材料对成膜质量影响较大,在硅片上薄膜的摩擦系数可达0.08;同时偏压的变化会引起喇曼谱线中D峰和G峰位置向低频移动,半高宽σG增大、σD减小。     

离子束辅助沉积WS_2-Ti-Ag复合薄膜的摩擦性能

采用ZDH-100型号离子束复合沉积设备沉积WS_2-Ti-Ag复合薄膜,基材为轴承钢和单晶硅(100).采用场发射扫描电子显微镜、XRD衍射仪,检测复合薄膜的表面形貌、微观结构.采用球-盘式摩擦磨损试验机,对复合薄膜在大气环境中的摩擦性能进行了研究.结果表明:采用离子束辅助沉积技术制备的WS_2-Ti-Ag复合薄膜是非晶态薄膜;并且随法向载荷的增加,复合薄膜的摩擦因数减小,摩擦状态越稳定,耐磨寿命越短.     

浸渍-提拉法制备WO3薄膜的气敏性能研究

采用溶胶-凝胶方法制备WO3前驱液,利用浸渍-提拉法使其成膜。通过XRD分析了不同热处理温度对WO3晶体结构的影响,通过SEM图观察了不同提拉次数的WO3薄膜形貌。所得WO3薄膜的微观结构和气敏性能随提拉次数不同而有很大差异,提拉1次、2次的样品薄膜不连续,电阻过大,灵敏度无法测量;提拉3次成膜的样品电阻稳定,气敏性能最好,对NO2有很高的灵敏度。