基于十六项误差模型算法的GCPW校准标准研制

开发了用于表征W波段电路的在片十六项误差模型 GCPW校准标准。GCPW校准标准与被测晶体管制作在薄的砷化镓（GaAs）衬底上，可有效消除校准标准和被测件由于衬底、边界条件不一致带来的系统误差。校准标准设计中采用合适的尺寸和过孔工艺来保证单模传输（减小平行板模式和表面波模式）。为了精确标定十六项误差模型校准标准的散射参数，同一片晶圆片还设计了多线TRL辅助校准标准。十六项误差模型校准标准和商用的阻抗标准（LRRM）测试同一无源器件，测试结果表明前者在测试串扰方面更为准确。实验结果表明，GCPW校准标准可替代传统的多线TRL校准标准，用于W波段及以上的在片测试。

Development of GCPW Calibration Standards Based 16-term Error Model method

On-wafer-level 16-term error model calibration standards used for characterization of W-band circuits based on grounded coplanar waveguide (GCPW). These transistors were fabricated on thin gallium arsenide (GaAs) substrate with metal ground on the back, and via holes were utilized to ensure single mode propagation (i.e., eliminating the parallel-plate mode or surface mode). For accurate definition of the calibration standards, multiline thru-reflect-line (TRL) assistant standards were also fabricated on the same wafer and measured. Passive device was measured subject to both 16-term and commercial LRRM calibrations. Measurement results demonstrate that 16-term calibration standards are capable of determining the cross-talk more accurately. This cluster of work reveals that the proposed GCPW GaAs calibration substrate could be a feasible alternative to conventional CPW impedance standard substrates, for on-wafer measurements at W-band and above.