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| 非晶态NiSiB薄膜电阻的弛豫 | |
| 引用本文： | 祁祥麟.非晶态NiSiB薄膜电阻的弛豫[J].北京航空航天大学学报,1998,24(1):108-111. |
| 作者姓名： | 祁祥麟 |
| 作者单位： | 1. 北京航空航天大学 应用数理系; 2. 北京工业大学 计算机学院 |
| 摘 要： | 用射频溅射制备了一组厚度不同的NiSiB非晶态薄膜.在不同温度下,用不同时间对薄膜进行了循环退火.实验测量了循环退火后的薄膜电阻随温度的变化,得到可逆和不可逆两组曲线.厚度较大(>1 000)的薄膜,电阻随温度的增加而增大,厚度较小(<400)的薄膜,电阻随温度的增加而减小.电阻温度系数有正有负.从非晶态材料的结构弛豫出发,应用激活能谱模型和推广的Ziman理论讨论了实验所得的结果. |
| 关 键 词： | 薄膜 电阻 弛豫 电阻温度系数 可逆和不可逆结构弛豫 |
| 收稿时间： | 1996-07-10 |
Resistance Relexation of NiSiB Amorphous Films |
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| Qi Xianglin,Cheng Xianan,Song Ruan,Gu Qihua.Resistance Relexation of NiSiB Amorphous Films[J].Journal of Beijing University of Aeronautics and Astronautics,1998,24(1):108-111. | |
| Authors: | Qi Xianglin Cheng Xianan Song Ruan Gu Qihua |
| Institution: | 1. Beijing University of Aeronautics and Astronautics,Dept.of Applied Mathematics and Physics; 2. Computer Institute of Beijing Polytechnic University |
| Abstract: | A series of NiSiB films of various thickness were prepared by R.F.sputtering.The films were annealed at different temperature and for different time.The resistance of the annealed films were measured as a function of temperature during two or more heating cooling cycles.Measurements of annealed films showed that there were two forms of resistance versus temperature curves.One was reversible the other was irreversible.The resistance of the thicker films (>1000) increased with increasing temperature and the resistance of thinner films (<400) decreased with an increase in the temperature.The temperature coefficient of resistance may be positive or negative.From the relaxation of amorphous material these behaviours are disscussed based on the activation energy spectra and in terms of extatended Ziman theory for metallic glasses. |
| Keywords: | thin fimls electrical resistance relaxation temperature coefficient of electrical resistance reversible and irreversible structure relaxation |
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