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| 基于HEMT的单片微波集成放大器设计 | |
| 引用本文： | 杨学斌,吕善伟,苏东林,王良臣.基于HEMT的单片微波集成放大器设计[J].北京航空航天大学学报,2000,26(3):290-292. |
| 作者姓名： | 杨学斌 吕善伟 苏东林 王良臣 |
| 作者单位： | 1. 北京航空航天大学,电子工程系 2. 中国科学院半导体研究所 |
| 摘 要： | 介绍了S波段单级单片微波集成放大器的设计方法,电路核心为高电子迁移率晶体管(High Electron Mobility Transistor, HEMT).针对在该波段高电子迁移率晶体管稳定性较差、噪声性能优秀的特点设计电路拓扑,在HEMT的输入端并联一个200Ω电阻,用HP-EESOF公司的Libra2.1软件进行了小信号电路仿真与设计.仿真结果表明设计的放大器是绝对稳定的,在2~3GHz频带内增益为14.2dB,纹波小于0.4dB,噪声系数约2.7dB,满足实用要求. |
| 关 键 词： | 微波晶体管放大器 微波集成电路 仿真 高电子迁移率三极管 |
| 收稿时间： | 1999-04-29 |
| 修稿时间： | : |
S-Band MMIC Amplifier Design Using HEMT |
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| YANG Xuebin,Lü Shanwei,SU Donglin,WANG Liangchen.S-Band MMIC Amplifier Design Using HEMT[J].Journal of Beijing University of Aeronautics and Astronautics,2000,26(3):290-292. | |
| Authors: | YANG Xuebin Lü Shanwei SU Donglin WANG Liangchen |
| Institution: | 1. Beijing University of Aeronautics and Astronautics,Dept. of Electronic Engineering; 2. Institute of Semiconductors Chinese Academy of Sciences |
| Abstract: | The design procedure of S-Band microwave monolithic integrated circuits (MMIC's) amplifier using high electron mobility transistors (HEMT's) is proposed. The topology of the circuit designed is taken into account in order to guarantee the stability. A 200Ω resistance is parallel with the drain port of HEMT. It lowers the gain and enlarges the noise of amplifier but ensures that the amplifier is absolutely stable. Simulation results by Libra 2.1 show that the gain in 2～3GHz is 14.2dB, gain ripple is smaller than 0.4dB and the noise figure is 2.7dB. These parameters satisfy the practical requirement. |
| Keywords: | microwave transistor amplifiers microwave integrated circuits simulation high electron mobility transistors |
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