| 纳米硅薄膜的氧化特性 |
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| 引用本文： | 刘明,傅东锋,崔志燮,江兴流.纳米硅薄膜的氧化特性[J].北京航空航天大学学报,1999,25(1):96-99. |
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| 作者姓名： | 刘明 傅东锋 崔志燮 江兴流 |
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| 作者单位： | 1. 北京航空航天大学,应用数理系
2. 烟台大学,电子系 |
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| 摘 要： | 将ｎｃ－Ｓｉ：Ｈ薄膜进行等离子和高温氧化处理，测量了样品的氢，氧含量，Ｒａｍａｎ谱，红外吸收谱，光致发光（ＰＬ），结果表明两种氧化方式都将氧掺入薄膜中，但不同处理方式氧在薄膜中的键合形式不同Ｒａｍａｎ谱表明氧化处理对薄膜中晶粒大小及晶态比没有影响，用晶粒－表面模型对氧化引起的光致发光（ＰＬ）蓝移进行了解释。
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| 关 键 词： | 光致发光 表面复合 量子效应 表面态 |
| 修稿时间： | : 1997-09- |
Oxidization Influence on Hydrogenated Nano-crystalline Silicon Film's Properties |
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| Liu Ming,Fu Dongfeng,Cui Zhixie,Jiang Xingliu.Oxidization Influence on Hydrogenated Nano-crystalline Silicon Film''''s Properties[J].Journal of Beijing University of Aeronautics and Astronautics,1999,25(1):96-99. |
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| Authors: | Liu Ming Fu Dongfeng Cui Zhixie Jiang Xingliu |
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| Abstract: | The hydrogenated nano crystalline silicon (nc Si:H) films are prepared using conventional plasma enhanced chemical vapor deposition (PECVD) method and oxidized by plasma and high temperature treatment which both doped oxygen into nc Si:H film. The contents of hydrogen and oxygen, the infrared absorption spectra, photoluminescence (PL) spectra are measured. The PL peak wavelength blue shifts from 720nm to 660nm at 77K, which can be explained by grain surface model. The bonded forms of oxygen in nc Si:H are changed with different oxidized way and their influence on PL spectra is also investigated. |
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| Keywords: | photoluminescence surface recombination quantum effects surface states |
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