星载L波段宽带低噪声放大器芯片设计

基于0.25μm 砷化镓赝品高电子迁移率晶体管（GaAs pHEMT）工艺，设计了一款应用于星载微波接收机的L波段单片微波集成电路（MMIC）低噪声放大器（LNA）。该低噪声放大器采用电流复用拓扑结构，降低了芯片的工作电流，节省了宝贵的卫星能量资源；通过两级负反馈方式优化了器件的稳定性和增益平坦度，提高了卫星通信质量；恒流源的偏置结构使得工作电流随工艺波动较小，芯片维持在稳定的工作状态下。测试结果表明：该放大器工作电流为35mA，在频率范围0.9~1.8GHz内，增益大于33dB，噪声系数小于0.6dB，增益平坦度小于0.5dB；芯片尺寸为2.0mm×1.3mm，满足航天产品的高性能小型化应用需求。

Design of L-band space based wideband low noise amplifier chip

An L-band monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) used in satellite microwave receiver was developed with 0.25μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The current reuse topology structure was used to achieve lower current and the precious satellite power resource was saved. The two-stage negative feedback was applied to increase stability and gain flatness, and then satellite communication quality was improved. The constant current source bias stabilized the working conditions where current was slightly influenced by the processes. The test results show that the working current is below 35mA, from 0.9GHz to 1.8GHz, the gain is higher than 33dB with gain flatness less than 0.5dB, the noise figure is below 0.6dB, and the size of the LNA chip is 2.0mm×1.3mm. The circuit can meet the requirement of high performance and miniaturization in space application.