常压化学气相沉积SiC的组织结构及其稳定性

研究了CH3SiCl3-H2-Ar体系在常压条件下化学气相沉积SiC的组织结构及其高温稳定性。在一定沉积温度下，沉积物的形貌由H2流量所控制；而在H2流量一定的条件下，随着沉积温度的提高，沉积物的晶粒尺寸和致密度增加。本实验所得到的沉积物均为纳米级β-SiC,经高温热处理后发生明显的晶粒长大现象。

MICROSTRUCTURE AND STABILITY OF SILICON CARBIDE CHEMICAL VAPOR DEPOSITED AT NORMAL ATMOSPHERE PRESSURE

Microstructure, morphology, and thermal stability of silicon carbide were investigated which was chemical vapor deposited at normal atmosphere pressure in a CH 3SiCl 3 H 2 Ar system. At deposition temperature of 1300℃, the morphologies of SiC were whisker, film, and powder respectively as flow of H 2 was increased from 20, 200 to 700 ml·min 1 . The crystalline size and texture density of SiC film were increased with the increase of deposition temperatures when the flow of H 2 was maintained at 200 ml·min 1 . Within the present experimental conditions, the deposits were β SiC whose crystalline sizes were in 10 1nm scale. The crystal growth was observed after the deposit was annealed at temperature of 1550℃ in vacuum.