| 具有纳米结构的 VO<sub>2</sub> 相变薄膜 |
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| 引用本文： | 许念坎,尹大川,张晶宇,郑修麟.具有纳米结构的 VO2 相变薄膜[J].航空学报,1997,18(5):607-610. |
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| 作者姓名： | 许念坎 尹大川 张晶宇 郑修麟 |
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| 作者单位： | 西北工业大学材料科学与工程学院, 西安, 710072 |
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| 摘 要： | 采用无机溶胶-凝胶法制备VO2相变薄膜，该薄膜相变时的电阻（率）突变可达4～5个数量级。并用XRD,DSC和TGA法研究了制膜过程中干凝胶膜的层状非晶纳米结构。通过适当的非晶晶化过程及随后V2O5→VO2转变的真空热处理，可获得带有空洞（void）结构的低密度纳米薄膜，从而使电阻（率）突变特性异常优异。
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| 关 键 词： | V2相变薄膜 纳米结构 无机溶胶-凝胶法 |
VO<sub>2</sub> THIN FILMS WITH NANOSTRUCTURE |
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| Xu Niankan,Yin Dachuan,Zhang Jingyu,Zheng Xiulin.VO2 THIN FILMS WITH NANOSTRUCTURE[J].Acta Aeronautica et Astronautica Sinica,1997,18(5):607-610. |
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| Authors: | Xu Niankan Yin Dachuan Zhang Jingyu Zheng Xiulin |
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| Institution: | College of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an,710072 |
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| Abstract: | The VO<sub>2</sub> thin films prepared by an inorganic sol gel method possess a sharp resistivity switching up to 4～5 orders of magnitude. In this paper, the amorphous nanostructural layer in the V<sub>2</sub>O<sub>5</sub> dry gel films was studied by XRD, DSC and TGA. In the process of crystallization from the amorphous state and in the subsequent vacuum heat treatment procedure from V<sub>2</sub>O<sub>5</sub> to V<sub>2</sub>, one can obtain low density nanostructural thin films with void structure, which was attributed to the high quality of resistivity jump at the phase transition. |
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| Keywords: | VO< sub> 2< /sub> thin films nanostructure inorganic sol-gel method |
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