MEMS惯性器件低应力封装过渡层研究

封装应力是影响MEMS惯性器件输出性能的主要因素之一，封装应力是由于封装过程中封装对象间材料热特性不匹配所引起的。封装应力除了受封装对象本身的材料性能影响外，还与芯片及基底间的过渡层形式有关。不同的过渡层形式不仅会影响封装应力的峰值，还会对应力的分布情况产生影响。为了研究不同形式的过渡层对三层结构MEMS惯性器件芯片封装应力的影响，首先利用COMSOL有限元仿真分析软件简要地分析了不同材料参数对封装应力的影响，并进一步研究了常见封装形式以及不同封装结构的应力分布规律。结果表明，不同的粘接材料、封装形式和封装结构都会引起封装应力的变化。

Study on Low Stress Transition Layer Technology of MEMS Inertial Sensor

Packaging stress is one of the main factors affecting the output performance of MEMS inertial sensors, the packaging stress is caused by the mismatch of thermal properties of materials between packaging objects. The packaging stress is not only affected by the material properties of the packaging object itself, but also related to the transition layer form between chip and substrate. Different transition layers not only affect the peak stress of packaging, but also affect the distribution of stress. In order to study the effect of different transition layers on the packaging stress of three-layer MEMS inertial sensors, firstly, the influence of different material parameters on packaging stress is briefly analyzed by using COMSOL finite element simulation software, furthermore, the stress distribution rules of common packaging forms and different packaging structures are studied. The results show that different bonding materials, packaging forms and packaging structures will lead to different packaging stress.