| 用10 MeV质子和钴60 γ射线进行CCD空间辐射效应评估 |
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| 引用本文： | 于庆奎,唐民,朱恒静,张海明,张延伟,孙吉兴.用10 MeV质子和钴60 γ射线进行CCD空间辐射效应评估[J].航天器环境工程,2008,25(4). |
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| 作者姓名： | 于庆奎 唐民 朱恒静 张海明 张延伟 孙吉兴 |
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| 作者单位： | 中国空间技术研究院电子元器件可靠性中心,北京,100029 |
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| 摘 要： | 文章用10MeV质子和钴60γ射线对CCD(Charge Coupled Device)进行了辐照试验,分别计算得到了电离总剂量和位移效应的失效剂量。通过分析比较得出:在空间环境中,相对于电离总剂量效应而言,位移效应对CCD的损伤更为严重。因此,进行CCD辐射效应评估时,不仅要考虑电离总剂量效应,还要考虑位移效应。文章还探讨了评估CCD抗位移损伤能力的方法。
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| 关 键 词： | CCD 辐射效应 电离总剂量效应 位移效应 |
Experimental investigation on radiation damage on CCD by 10MeV proton and Cobalt 60 Gamma |
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| Yu Qingkui,Tang Min,Zhu Hengjing,Zhang Haiming,Zhang Yanwei,Sun Jixing.Experimental investigation on radiation damage on CCD by 10MeV proton and Cobalt 60 Gamma[J].Spacecraft Environment Engineering,2008,25(4). |
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| Authors: | Yu Qingkui Tang Min Zhu Hengjing Zhang Haiming Zhang Yanwei Sun Jixing |
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| Abstract: | CCDs were irradiated with 10 MeV proton and Cobalt 60. The characteristics of CCD were measured before and after irradiation. By comparing the test results, it is found that the parameter failure is mainly due to displacement damage. A procedure to evaluate the displacement damage in space is proposed. |
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| Keywords: | Charge Coupled Device radiation effect total dose radiation displacement damage |
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