国产先进工艺SoC器件空间单粒子效应试验研究

国产某型号导航SoC器件采用55 nm商用工艺生产。针对该型器件的辐射敏感性分析表明其易受单粒子效应影响，为此利用重离子加速器完成空间单粒子辐照的地面模拟试验，考查器件的单粒子效应，为其空间应用提供数据支撑。结果表明:器件抗单粒子锁定的LET阈值大于81.4 MeV·cm2/mg，满足空间应用指标要求；但器件对单粒子翻转和单粒子功能中断较为敏感。利用ForeCAST软件计算得到GEO、Adams 90%最坏环境模型，3 mm(Al)屏蔽条件下器件的DFT模式单粒子翻转率为6.80×10-8 d-1·bit-1，SRAM模式单粒子翻转率为5.61×10-11 d-1·bit-1，单粒子功能中断率为5.24×10-5 d-1，在轨应用时需要采取相应的防护措施。

Experimental research on space single event effects on homemade SoC device

A certain homemade aerospace SoC device is manufactured by the 55 nm commercial process. The in-depth analysis of radiation vulnerability of this kind of device indicates that the space single-particle effects deserve a special attention. In this paper, the heavy ions from the high-energy accelerator are used to conduct the space single-particle simulation test. It is shown that the LET threshold of the device’s anti-SEL ability is greater than 81.4 MeV·cm2/mg, which meet the requirement for the inflight application. The device is sensitive to the single event upset(SEU) effect. The SEU probability under the SCAN chain mode calculated by the ForeCAST software is 6.80×10-8 times per day per bit. So it is necessary to take protection measures against the single event upset in orbit applications.