SiC MOSFET器件单粒子烧毁仿真分析

应用于航天器的宽禁带半导体功率器件会受到空间带电粒子的影响而存在单粒子烧毁（SEB）风险。为研究单粒子烧毁的机理及防护措施，文章利用半导体工艺器件仿真（TCAD）对SiC MOSFET器件进行了SEB仿真分析，发现粒子入射最敏感位置时器件发生SEB的阈值电压在500 V。同时，通过仿真获得器件微观电参数分布特性，分析认为器件发生SEB的机理是寄生晶体管的正反馈作用导致缓冲层和基区的电场强度（5.4 MV/cm和4.2 MV/cm）超过SiC材料击穿场强（3 MV/cm）。此外，针对仿真揭示的器件SEB薄弱区域，提出将P+源区的深度向下延伸至Pbase基区底部的工艺加固思路，并通过仿真验证表明该措施使器件发生SEB的阈值电压提高到近550 V。以上模拟结果可为该类器件的抗SEB设计提供技术支持。

Simulation of single event burnout of SiC MOSFET devices

With the wide bandgap semiconductor power devices used in the spacecraft under the action of the space charged particles, a single event burnout (SEB) might happen. In order to study the mechanism of the single event burnout and the related protection measures, a simulation of the SEB of the SiC MOSFET device is carried out by using the TCAD, and it is found that the device has a SEB threshold voltage of 500 V for the particle incidence in the most sensitive location. At the same time, the microscopic electrical parameter distribution characteristics of the device are obtained through simulation. The mechanism of the SEB in the device can be explained in this way that the positive feedback effect of the parasitic transistor causes the electric field strength (5.4 MV/cm and 4.2 MV/cm) in the buffer layer and the base region to exceed the breakdown field intensity (3 MV/cm) of the SiC material. Based on the simulation, a protection plan is proposed for the area of the device that is vulnerable to the SEB, which, proved by a follow-up simulation, can increase the SEB threshold voltage of the device from 500 V to near 550 V. The above simulation results may provide a technical support for the SEB resistance design of such kind of devices.