| 硅集成电路老炼时间确定和寿命预计 |
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| 引用本文： | 宁永成.硅集成电路老炼时间确定和寿命预计[J].航天器环境工程,2010,27(4):508-509. |
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| 作者姓名： | 宁永成 |
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| 作者单位： | 中国空间技术研究院,物资部可靠性中心,北京,100029 |
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| 摘 要： | 文章基于阿列纽斯经验公式,利用相关标准中的数据,拟合得到硅集成电路老炼试验温度和时间的关系,根据这种关系可以确定在标准未规定的高温下硅集成电路的老炼时间,同时预计了硅集成电路的工作寿命。最后基于经典的温度应力加速试验模型进行了分析,并与前者进行了对比。
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| 关 键 词： | 集成电路 老炼试验 寿命 温度 激活能 |
| 收稿时间： | 2009/11/24 0:00:00 |
The determination of the burn-in time and the forecast of the lifetime of silicon IC |
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| Ning Yongcheng.The determination of the burn-in time and the forecast of the lifetime of silicon IC[J].Spacecraft Environment Engineering,2010,27(4):508-509. |
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| Authors: | Ning Yongcheng |
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| Institution: | Electronic Components Reliability Center, China Academy of Space Technology, Beijing 100029, China |
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| Abstract: | Based on the Arrhenius equation, using the data from the standards which are widely used, an analysis is made to obtain the relations between temperature and time for silicon semiconductor integrated circuits. These relations can be used to forecast the lifetime of the operated silicon semiconductor integrate circuit. The above-mentioned relations are compared with conventional relations. |
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| Keywords: | integrated circuit burn-in test lifetime temperature activation energy |
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