| 大容量Flash存储器空间辐射效应试验研究 |
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| 引用本文： | 张洪伟,于庆奎,张大宇,孟猛,唐民.大容量Flash存储器空间辐射效应试验研究[J].航天器工程,2011,20(6):130-134. |
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| 作者姓名： | 张洪伟 于庆奎 张大宇 孟猛 唐民 |
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| 作者单位： | 中国空间技术研究院,北京,100094 |
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| 摘 要： | 分析了商用Flash存储器应用于航天器时应考虑的空间辐射效应和机理,并利用钴-60γ射线和重离子加速器对韩国三星公司生产的大容量Flash存储器K9XXG08UXA系列进行了抗电离总剂量试验和抗单粒子试验,以评估其空间应用可行性。试验结果显示：这一系列存储器的累积电离总剂量为50krad（Si）时,器件部分数据丢失,重...
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| 关 键 词： | 航天器 Flash存储器 辐射效应 电离总剂量 单粒子效应 |
Radiation Effect Test on Large Capacity Flash Memories |
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| ZHANG Hongwei,YU Qingkui,ZHANG Dayu,MENG Meng,TANG Min.Radiation Effect Test on Large Capacity Flash Memories[J].Spacecraft Engineering,2011,20(6):130-134. |
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| Authors: | ZHANG Hongwei YU Qingkui ZHANG Dayu MENG Meng TANG Min |
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| Institution: | (China Academy of Space Technology,Beijing 100094,China) |
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| Abstract: | The radiation effects and mechanism of highly scaled Flash memories applied in spacecraft are analyzed.The total ionizing dose and single event effect tests of highly scaled Flash memories K9XXG08UXA series of Samsung are carried out at the Co-60 facility and the heavy ions accelerator to evaluate the possibility of application in space.The results show that a part of data are lost at a total ionizing dose of nearly 50krad（Si） and the memories work well after resetting,and no single event latch-up and single event functional interrupt occures at linear energy transformation below 38MeV·cm2/mg.The calculated value of single event upset rate of memory unit is 2×10-2 errors/（device·day） in the condition of ADAMS of 90% worst environment and SSO altitude of 965km. |
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| Keywords: | spacecraft Flash memory radiation effect total ionizing dose single event effect |
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