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太赫兹固态电子器件和电路
作者姓名:金智  丁芃  苏永波  张毕禅  汪丽丹  周静涛  杨成樾  刘新宇
作者单位:中国科学院微电子研究所,北京100029
基金项目:国家重点基础研究发展计划(973计划)项目(编号:2010CB327502).
摘    要:随着微电子技术的飞速发展,半导体器件的截止频率已经进入到太赫兹频段,太赫兹电路的频率特性特性得到极大发展。以固态器件为基础的电路的工作频率进入到太赫兹频段。太赫兹固态电子器件与电路技术在空间领域有着重要的应用前景。文章重点介绍InP基三端太赫兹固态电子器件和电路,以及太赫兹肖特基二极管器件和电路的技术发展过程与最新动态。并指出随着器件与电路的整体化与集成化发展趋势,太赫兹单片集成技术是其未来发展方向。

关 键 词:太赫兹  固态电子器件和电路  InP基三端电子器件  肖特基二极管  综述

Solid State Terahertz Devices and Circuits Applied in Space Technology
Authors:JIN Zhi  DING Peng  SU Yong-bo  ZHANG Bi-chan  WANG Li-dan  ZHOU Jing-tao  YANG Cheng-yue  LIU Xin-yu
Institution:( Institute of Microelectronics, Chinese Academy of Sciences, Beijing China, 100029)
Abstract:The fast development of microelectronics makes the cutoff frequency of semiconductor devices exceed terahertz,which significantly improves the frequency of terahertz circuits. The solid-state electronic circuits entrance terahertz frequency. Solid State Terahertz Devices and Circuits are believed to be one of the most important promising technologies in space applications. The development of InP-based three-terminal terahertz solid state electronic devices and schottky barrier diodes, as well as the related circuits are reviewed. And it is pointed that terahertz monolithic integrated circuits (TMIC) is the most possible solution for the future development of this technology.
Keywords:Terahertz  Solid state terahertz devices and circuits  InP-based three-terminal terahertz solid state electronic devices  Schottky barrier diodes  
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