球形收集极结构的二次电子 产额测量装置及测量方法

为了精确测量材料在不同入射电子能量和入射电子角度下的二次电子产额（secondary electron yield，SEY）以及二次电子能谱，研制了收集极为球形结构的SEY测量装置。首先介绍了装置的构成、测量原理及中和方法，并对测得的信号波形进行了分析。随后，测量了Cu材料和Al2O3薄膜材料的SEY值和二次电子能谱。结果表明：不同入射电子能量下SEY值的标准偏差分别小于0.055（Cu）和0.126（Al2O3）；不同入射电子角度下SEY值与理论模型符合的很好，拟合R2值为0998 64（Cu）；出射的二次电子能量绝大部分集中在10eV（Cu）和20eV（Al2O3）以下，符合相关理论预期。

Measurement system and method for secondary electron yield with spherical collector

In order to accurately measure the secondary electron yield (SEY) of the material at different incident electron energies and angles, and the energy spectrum of the secondary electrons, a measurement system with a spherical collector is built. First, the structure, measurement principle and neutralization method of the measurement system are introduced, and the obtained signal waveform is analyzed. Subsequently, the SEY and energy spectrum of Cu and Al2O3samples are measured. The measurement results show that the standard deviations of the SEY values measured at different incident energies are less than 0.055 (Cu) and 0.126 (Al2O3). The measured SEY values at different incident angles are in good agreement with the theoretical model, and the fitted R2 is 0.998 64 (Cu). Most of the emitted secondary electron energy is concentrated below 10eV(Cu) and 20eV (Al2O3), respectively, which is in line with the expectations of theory.