| (100)/(111)面金刚石膜抗氧等离子刻蚀能力 |
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| 引用本文： | 孙祁,汪建华,程翀,陈祥磊,吴荣俊,刘单,祝娇.(100)/(111)面金刚石膜抗氧等离子刻蚀能力[J].航空材料学报,2019,39(2):55-60. |
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| 作者姓名： | 孙祁 汪建华 程翀 陈祥磊 吴荣俊 刘单 祝娇 |
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| 作者单位： | 武汉工程大学 材料科学与工程学院,武汉,430070;武汉第二船舶设计研究所,武汉,430064 |
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| 摘 要： | 使用微波等离子体技术(microwave plasma chemical vapor deposition,MPCVD)对膜厚100μm的(100)和(111)晶面金刚石膜进行刻蚀处理,研究其抗氧等离子体的行为。结果表明:(100)晶面刻蚀首先发生在晶棱晶界处,而(111)晶面金刚石的刻蚀首先发生在晶面处;30 min刻蚀后,(100)面金刚石有明显晶面显现,(111)面金刚石膜晶面不明显;60 min刻蚀后,(100)和(111)晶面金刚石膜的择优取向消失;(100)晶面金刚石特征峰的半高宽值(full width at the half maximum,FWHM)由刻蚀前的8.51 cm–1上升至刻蚀后的12.48 cm–1,(111)晶面金刚石FWHM值由8.74 cm–1上升至148.49 cm–1;(100)晶面金刚石膜刻蚀速率在40 min时为0.35μm/min,60 min时上升至1.34μm/min;刻蚀前期,(100)晶面金刚石膜具有更好的抗氧等离子体刻蚀能力,刻蚀后期其抗刻蚀能力与(111)晶面金刚石膜相似。
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| 关 键 词： | 金刚石膜 (100)晶面 (111)晶面 氧等离子体 刻蚀 |
Resistance abilities of (100)/(111)-faceted diamond films against oxygen plasma etching |
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| SUN Qi,WANG Jianhua,CHENG Chong,CHEN Xianglei,WU Rongjun,LIU Dan,ZHU Jiao.Resistance abilities of (100)/(111)-faceted diamond films against oxygen plasma etching[J].Journal of Aeronautical Materials,2019,39(2):55-60. |
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| Authors: | SUN Qi WANG Jianhua CHENG Chong CHEN Xianglei WU Rongjun LIU Dan ZHU Jiao |
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| Institution: | (Wuhan Second Ship Design and Research Institute,Wuhan 430064,China;School of Materials Science and Engineering,Wuhan Institute of Technology,Wuhan 430070,China) |
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| Abstract: | SUN Qi;WANG Jianhua;CHENG Chong;CHEN Xianglei;WU Rongjun;LIU Dan;ZHU Jiao(Wuhan Second Ship Design and Research Institute,Wuhan 430064,China;School of Materials Science and Engineering,Wuhan Institute of Technology,Wuhan 430070,China) |
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| Keywords: | diamond films (100)-faceted (111)-faceted oxygen plasma etching |
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