| DC Characteristics of Gamma-ray Irradiated SiGe HBT in Comparison with Si BJT |
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| 作者姓名： | MENG Xiang-ti HUANG Qian WANG Ji lin CHEN Pei-yi TSIEN Pei-hsin |
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| 作者单位： | [1]Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084, China [2]Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| 基金项目： | National Natural Science Foundation of China （10075029 and 10375034） |
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| 摘 要： | The changes of DC characteristics of SiGe HBT after being submitted to γ-ray irradiation of 700 krad, 7 000 krad and 10 000 krad were compared to those of Si BJT. Generally speaking, Ib and Ib- Ib0 increase with the doses increasing. For SiGe HBT, with the doses increasing, Ic and Ic-Ic0 as well as the related changes of the current gain （β） will decrease at higher Vbe, while for Si BJT, with the doses increasing, after irradiation, Ib and Ic-Ic0 increase; ,8 and its related changes also decrease with their differences, however, tending to be very small at high doses of 7 000 krad and 10 000 krad. Moreover, given the same doses, the decreases of,a are much larger than SiGe HBT, which shows that SiGe HBT＇s anti-radiation performance proves to be better than Si BJT. Still, in SiGe HBT, some strange phenomena were observed： Ic-Ic0 will increase after the radiation of 7 000 krad in less than 0.65 V and as will ,8 in less than 0.75 V. The mechanism of radiation-induced change in DC characteristies was also discussed.
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| 关 键 词： | 锗化硅HBT 硅BJT γ射线辐射 直流性能 双极性晶体管 |
| 收稿时间： | 2006-08-10 |
| 修稿时间： | 2006-11-06 |
DC Characteristics of Gamma-ray Irradiated SiGe HBT in Comparison with Si BJT |
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| MENG Xiang-ti HUANG Qian WANG Ji lin CHEN Pei-yi TSIEN Pei-hsin.DC Characteristics of Gamma-ray Irradiated SiGe HBT in Comparison with Si BJT[J].Chinese Journal of Aeronautics,2006,19(B12):192-197. |
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