光学滤光片薄膜边缘应力研究

以光学滤光片薄膜边缘应力作为对象,研究了Ge/Zn S单、多层光学薄膜应力的变化规律。通过实验研究了离子束轰击能量以及真空退火温度等因素对Ge/Zn S光学薄膜应力类型、大小、变化及其分布的影响规律。Zn S薄膜的应力为压应力,采用离子束辅助工艺后薄膜边缘应力变得均匀;真空退火使Zn S薄膜的应力减小为原来的一半。通过优化沉积参数和张应力、压应力薄膜的组合降低了Ge/Zn S多层光学薄膜的应力,结果表明其平均应力分别为0.1 MPa,而且处于压应力状态。

Study on Stress in Edge of Optical Filters

Stress is a universal phenomenon in thin film deposition. It has important effect on structure and performance

of thin film. In order to improve optical and mechanical performance of filters, the stress in ZnS/ Ge optical

thin film and stress control technology are studied by theory and experiments. It is found that ion beam bombardment

and vacuum annealing affect the stress in thin film. The stress in ZnS films is compressive stress. Ion beam assisted

deposition makes the stress uniformity in ZnS films. Vacuum annealing makes compressive stress in ZnS films half of

the value before annealing. Finite element method analysis results of ZnS/ Ge multilayer thin films show the thermal

stress has larger value on edge of thin film and substrate. Thin film has larger deformation on edge. The results show

that ZnS/ Ge multilayer thin film filters have less compressive stress by optimum deposition and different stress films.

The average stress is 0. 1 MPa respectively.