数据存贮器的电磁脉冲效应及加固方法研究

计算机中的数据随机存贮器（RAM）非常容易受到电磁脉冲（EMP）的干扰。为研究电磁脉冲对计算机数据存贮器的影响,以静电放电电磁脉冲（ESD EMP）为干扰源,以单片机的外部数据存贮器为实验对象,进行了静电放电电磁脉冲对外部数据存贮器的辐照实验。实验表明,在静电放电电磁脉冲作用下,外部数据存贮器（RAM）的内容很容易被改写。在实验基础上,对外部数据存贮器的加固方法进行了研究。

Study on EMP effects to data RAM and hardening technology

Data random-access memory（RAM） of computer is easy to be interfered by electromagnetism pulse（EMP）.In order to study the effects of EMP to the RAM of computer,taking the electrostatic discharge electromagnetism pulse（ESD EMP） as interference source and the exterior RAM in single chip microcomputer as interference object,the irradiation experiments are made.The experiments show that exterior RAM＇s contents are easy to be changed by ESD EMP.Based on the experiments,the hardening methods are studied.