| CLBO晶体的半固结磨粒研磨加工研究 |
| |
| 引用本文： | 郁炜,吕迅.CLBO晶体的半固结磨粒研磨加工研究[J].航空精密制造技术,2008,44(6). |
| |
| 作者姓名： | 郁炜 吕迅 |
| |
| 作者单位： | 1. 衢州学院信电系,浙江,324000
2. 浙江工业大学机械制造及自动化教育部重点实验室,杭州,310032 |
| |
| 摘 要： | 通过对CLBO晶体半固结磨粒研磨过程进行研究,经过粗研和精研后,CLBO晶体表面粗糙度达到1ns且表面无划痕.并从加工表面的扫描电镜图可知,CLBO晶体半固结磨粒研磨的材料去除机理是延性去除模式.
|
| 关 键 词： | 半固结磨粒 研磨 延性域 |
Research on Semi Bonded Abrasive Lapping of CLBO Crystal |
| |
| YU Wei,LV Xun.Research on Semi Bonded Abrasive Lapping of CLBO Crystal[J].Aviation Precision Manufacturing Technology,2008,44(6). |
| |
| Authors: | YU Wei LV Xun |
| |
| Institution: | YU Wei,LV Xun (1. Quzhou College,Quzhou 324000,2. The MOE Key Laboratory of Mechanical Mnufacture , Automation,Zhejiang University of Technology,Hangzhou 310032) |
| |
| Abstract: | The technology of semi bonded abrasive lapping about CLBO was researched. After rough and fine lapping, the CLBO crystal surface roughness can achieve 1nm and keep the surface quality well. The material removal mechanism of CLBO is ductile-regime mode by scan electron microscope. |
| |
| Keywords: | CLBO |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
