质子单粒子翻转截面计算方法

在分析质子与硅反应的基础上，建立了质子单粒子翻转截面理论计算模型，提出了模拟计算方法。计算得到了不同能量的高能质子与硅反应产生的次级粒子种类、截面、能谱和双微分截面。采用Monte Carlo方法模拟质子与硅的反应；应用TRIM程序计算次级粒子的射程；计算得到次级粒子在存储单元的灵敏区内沉积的能量，产生的电荷。通过与临界电荷的比较，判断是否导致单粒子翻转，从而得到单粒子翻转截面。计算得到的单粒子翻转截面与实验数据符合较好。

Calculation Method for Proton Single Event Upset Cross Section

A model and a simulation method for calculating the proton Single Event Upset (SEU) cross section are presented by analysis of proton reactions in silicon.The variety,production cross section,energy spectrum and double differential cross section are calculated for the secondary particles produced by reactions of high energy protons in silicon.The reaction in silicon is simulated with Monte Carlo method.The range of secondary particles is computed with TRIM code.The energy and charges deposited by secondary particles are calculated in sensitive volume in memory cell.Whether a proton induced SEU is determined by comparing the charges with the critical charge and the proton SEU cross section is obtained.The calculation results are in agreement with the experimental results.