| 薄膜生长工艺对TiO_2基紫外探测器光电性能的影响 |
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| 引用本文： | 祁洪飞,刘大博.薄膜生长工艺对TiO_2基紫外探测器光电性能的影响[J].航空材料学报,2011,31(5). |
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| 作者姓名： | 祁洪飞 刘大博 |
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| 作者单位： | 北京航空材料研究院,北京,100095 |
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| 摘 要： | 分别采用磁控溅射和溶胶-凝胶工艺制备了相同厚度的TiO2薄膜,并用以制备了金属-半导体-金属(MSM)结构TiO2基紫外探测器。通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了TiO2薄膜生长工艺对探测器光电性能的影响规律。结果表明:磁控溅射工艺下,探测器的光电流虽然较低,但响应时间和暗电流远小于溶胶-凝胶工艺制备的探测器,其具备了高辐射灵敏度和快速响应特性。磁控溅射工艺制备的TiO2薄膜结构较为致密,晶界和缺陷较少,方阻较高,这是其取得优良的光电特性的原因。
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| 关 键 词： | 溶胶-凝胶 磁控溅射 TiO2薄膜 紫外探测器 光电性能 |
Effect of Growth Technology of TiO_2 Film on Photoelectronic Properties of TiO_2 UV Detector |
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| QI Hong-fei,LIU Da-bo.Effect of Growth Technology of TiO_2 Film on Photoelectronic Properties of TiO_2 UV Detector[J].Journal of Aeronautical Materials,2011,31(5). |
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| Authors: | QI Hong-fei LIU Da-bo |
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| Institution: | QI Hong-fei,LIU Da-bo(Beijing Institute of Aeronautical Materials,Beijing 100095,China) |
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| Abstract: | Different TiO2 films with the same thickness were prepared by RF magnetron sputtering and Sol-Gel respectively.Then,MSM-type TiO2 UV detectors were made with the TiO2 films.The effect of growth technology of TiO2 film on photoelectronic properties was investigated through SEM,XRD,and the detection of photoelectronic properties.It was found that those UV detectors with TiO2 layer prepared by magnetron sputtering had high sensitivity and fast time responses.In this case,the TiO2 that film possesses high quali... |
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| Keywords: | Sol-Gel magnetron sputtering TiO2 film UV detector photoelectronic property |
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