| 全碳化硅功率模块开关瞬态特性及损耗研究 |
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| 引用本文： | 徐文凯,朱俊杰,聂子玲,韩一,孙军.全碳化硅功率模块开关瞬态特性及损耗研究[J].航空动力学报,2019,46(5):100-106, 119. |
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| 作者姓名： | 徐文凯 朱俊杰 聂子玲 韩一 孙军 |
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| 作者单位： | 海军工程大学 舰船综合电力技术国防科技重点实验室,湖北 武汉430033,海军工程大学 舰船综合电力技术国防科技重点实验室,湖北 武汉430033,海军工程大学 舰船综合电力技术国防科技重点实验室,湖北 武汉430033,海军工程大学 舰船综合电力技术国防科技重点实验室,湖北 武汉430033,海军工程大学 舰船综合电力技术国防科技重点实验室,湖北 武汉430033 |
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| 基金项目： | 国家自然科学基金项目(51490681) |
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| 摘 要： | 为了加快全碳化硅功率模块的实际工程应用,针对全碳化硅模块开通关断过程中电压电流变化率、栅极电压耦合、开通损耗和关断损耗开展了分析,并与传统IGBT功率模块进行了对比分析。在全碳化硅功率模块双脉冲试验的基础之上,研究了不同电压电流等级下开关瞬态特性和开关损耗,提取试验参数,获得了电压电流应力大小,为全碳化硅功率模块的工程应用提供有效参考。
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| 关 键 词： | 全碳化硅功率模块 双脉冲测试 开关瞬态特性 开关损耗 |
| 收稿时间： | 2019/2/20 0:00:00 |
Research on Switching Transient Performance and Loss of All Silicon Carbide Power Module |
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| XU Wenkai,ZHU Junjie,NIE Ziling,HAN Yi and SUN Jun.Research on Switching Transient Performance and Loss of All Silicon Carbide Power Module[J].Journal of Aerospace Power,2019,46(5):100-106, 119. |
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| Authors: | XU Wenkai ZHU Junjie NIE Ziling HAN Yi and SUN Jun |
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| Institution: | National Key Laboratory for Vessel Integrated Power System Technology, Naval University of Engineering, Wuhan 430033, China,National Key Laboratory for Vessel Integrated Power System Technology, Naval University of Engineering, Wuhan 430033, China,National Key Laboratory for Vessel Integrated Power System Technology, Naval University of Engineering, Wuhan 430033, China,National Key Laboratory for Vessel Integrated Power System Technology, Naval University of Engineering, Wuhan 430033, China and National Key Laboratory for Vessel Integrated Power System Technology, Naval University of Engineering, Wuhan 430033, China |
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| Abstract: | In order to accelerate the practical application of the all silicon carbide power module, the switching process of the all silicon carbide power module was analyzed. Parameters including voltage and current change rates, grid voltage coupling and switching loss were investigated. Besides, the IGBT module and the all silicon carbide power module were compared. On the basis of the doublepulse test of the all silicon carbide power module, the switching transient characteristics and the switching loss under different voltage and current levels were studied. The voltage and current stress values were obtained by extracting the test parameters. The results provided effective reference for the practical application of the all silicon carbide power module. |
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| Keywords: | all silicon carbide power module doublepulse test switching transient characteristics switching loss |
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