一种基于COTS器件的SiP微系统的抗总剂量效应加固设计与试验评估

总剂量效应是制约COTS器件空间应用的主要因素之一。为满足空间应用对电子系统高性能、小型化及抗辐射的需求，对一种基于COTS器件的SiP微系统的抗总剂量效应加固方案进行设计，采用模型分析与地面试验结合的方法对微系统的抗总剂量辐射能力进行评估。该评估方法将微系统作为设备与器件的一种结合体，先按照设备进行整体模型评估，后按照器件进行试验评估，提高了评估的效率，具有较强的工程实用价值。60Co γ射线辐照试验结果表明:加固后SiP微系统的抗总剂量能力不低于150 krad(Si)，可以满足相关任务应用需要。该微系统的抗总剂量效应加固设计和总剂量效应评估方法可为相关微系统研制提供参考。

Radiation-hardening design and experimental evaluation for a SiP micro-system based on COTS products

The total dose effect is one of the essential factors restricting the space applications of COTS products. In order to meet the requirements of high performance, miniaturization and radiation-robustness of electronic systems in the space applications, a total dose reinforcement scheme for a SiP (system in package) micro-system based on COTS devices is proposed, and a SiP micro-system is developed. In order to verify whether the micro-system can meet the needs of the applications in the space environment, a comprehensive evaluation method combining the model analysis with the total dose radiation test for the SiP micro-system is proposed. In view of the fact that the micro system is a combination of the equipment and the devices, the overall model evaluation is carried out on the equipment firstly, and then the test evaluation is carried out for the devices, thus the evaluation efficiency is improved with engineering benefit. It is shown through the 60Co radiation test that the anti total dose capability of the SiP micro-system is not less than 150 krad(Si), which can meet the application need of related tasks. The above-mentioned total dose reinforcement scheme and the total dose capability evaluation method for the SiP micro-system may be used in the development of related micro-systems.