卫星载荷二次电源用MOSFET的抗辐射设计及验证

针对某卫星载荷二次电源所面临的空间总剂量辐射环境及其效应,进行了二次电源用3款MOSFET(IRF5N3415、IRF7NA2907、IRF7N1405)的抗辐射总剂量设计,通过使用钽片加固及合理的结构布局防护使该3款MOSFET的辐照设计余量(RDM)均不小于3。开展总剂量辐照试验验证,对比参数变化得出MOSFET的抗电离总剂量数据,验证了加固设计的有效性。采用经过抗辐射设计的非宇航级元器件将成为空间降成本应用的趋势之一。

Anti-radiation design and experimental verification of MOSFETs used in a power supply on the space payload

This paper analyses the space total dose effects of three MOSFETs (IRF5N3415, IRF7NA2907, IRF7N1405) in a secondary power supply on the space payload. The process of the anti-radiation design is discussed. In order to make the radiation design margin (RDM) larger than three, the radiation hardening technologies such as the tantalum sheet hardening and reasonable structure re-arrangement are used. Through total dose radiation test, the electrical performance data of the three MOSFETs are obtained by comparing the variations of the main parameters before and after the test, which prove the effectiveness of the design. The use of non space-level components will become a new tendency for low cost space applications in the future.