离子注入铜薄膜后的氧化行为

为克服铜易氧化造成薄膜电阻增加、机械性能下降的缺点，采用离子注入技术对铜薄膜表面进行改性研究。离子注入后进行了氧化试验，并结合Ｘ射线衍射和卢瑟福背散射进行了分析。结果表明，离子注入对原有薄膜的电阻影响是很小的； 随注入剂量的增大，抗氧化能力提高；离子注入不但改善了铜薄膜的抗氧化能力，而且氧化行为及氧化层的结构也发生了变化，未经注入的铜薄膜形成的氧化铜以Ｃｕ２Ｏ为主，注入后氧化铜则为Ｃｕ２Ｏ 和ＣｕＯ 的复合结构。离子注入提高了铜薄膜抗氧化性能。

Oxidation behavior of copper thin films by ion implantation

In order to inhibit the oxidation induced rising in resistance and degradation of mechanical performance of copper thin films, ion implantation was employed for modification of the copper thin film surface. X ray diffraction and Rutherford Back Scattering techniques were adopted to investigate and analyze the oxidation characteristics of the films. It is indicated that ion implantation has insignificant effect on the rising in electrical resistance. In addition, the oxidation resistance increase with the increasing in dose of ion implantation. It was observed that the oxidation behavior of copper thin films was changed due to the ion implantation. After implantation, the oxide consists of Cu 2O and CuO, instead Cu 2O prior to implantation.