高温SiC器件及其集成电路在空间电子领域应用展望

金星、火星等行星空间探索对航天器电子学系统耐高温、抗辐照、抗腐蚀性等提出了严峻挑战。极低温电子学和高温电子学是近年来深空探索中的强烈需求。文章主要阐述高温SiC集成电路的起源，数字、模拟和功率IC的发展历程和研究现状。重点综述分析了高温SiC集成电路设计方法和流片验证的两条技术途径：首先，基于多层外延制造工艺的BJT器件单元及其双极集成电路；其次，基于离子注入掺杂工艺的互补单元及其CMOS集成电路。在此基础上还进一步介绍了高温SiC传感芯片、BCD功率IC及功率模块的应用可靠性验证。目前国际研究现状展示了SiC BJT和CMOS IC研制中大学学术界和半导体企业界的协同创新格局。最后展望了其在深空探索中的潜在应用及其面临的挑战性。本综述对国内研制空间环境用宽禁带半导体SiC高温集成电路及其电子学系统具有借鉴价值。

Application prospect of high-temperature silicon carbide devices and integrated circuits in space electronics

The exploration of Venus, Mars and other planetary space has put forward rigorous challenge for resistance of high temperature, radiation and corrosion of spacecraft electronics system. Extreme environment electronics for cryogenic temperature and high temperature is gaining a high demand in the field of deep space exploration during the past decade. In the paper, we briefly reviewed the history and research status of high-temperature SiC IC including the digital, analog and power IC. The main design methods of high-temperature SiC IC and two technical approaches for their wafer verification are mainly reviewed and analyzed. The two approaches are, first, BJT device unit based on multilayer epitaxial process and its integrated circuits; second, the complementary unit based on ion implantation doping process and its CMOS circuits. Additionally, long-term reliability verification for high temperature SiC sensor chip, BCD power IC and power module are briefly summarized. The reported research achievements for the development of SiC BJT and CMOS IC around the globe clearly indicated the collaborative innovation pattern between the university academia and semiconductor fab enterprises. Finally, we look into the future of their potential applications and the main challenges of deep space exploration mission. This review provides valuable reference for domestic research to develop high temperature integrated circuits based on wide-bandgap semiconductor SiC and its electronic system used for space environment.