Solidification of Anisotropic Semiconductor Tellurium Samples in Microgravity and Their Properties

A research program was partly completed to determine the influence of microgravity on the crystallization and electrical properties of tellurium, as a semiconductor with both anisotropic crystal lattice and energy spectrum. Three different tellurium samples were solidified in space by a modified Bridgman method in the Crystallizator ChSK-1 furnace aboard the MIR space station. The variation of the crystal structure, charge carrier concentration and mobility along the sample length was investigated and compared with material solidified on earth. The lowest impurity and defect concentrations were obtained in partially melted single crystals resolidified by the Bridgman method. The distribution of electric active and neutral defects along the samples with a concentration as small as 10⁻⁵ at% were measured by a galvanomagnetic method at low temperatures. Some peculiarities of the remelting process connected with microgravity were observed.