CSP结构半导体激光器二维稳态数值模拟

采用二维有限差分法对一个GaAs／GaAlAsCSP结构半导体激光器在稳态条件下的电、光特性进行了数值模拟。在电模型的分析中,以静电势、电子浓度和空穴浓度为基本变量,采用Gummel方法迭代求解三个电方程。利用与电方程求解中同样的差分网格,运用有限差分法对光波动方程进行求解,其中模式传播常数采用广义横向谐振法和变分原理结合的方法求取。通过电、光方程的完全自洽迭代过程,得到了完整的光、电特性。在此基础上．对因制造工艺不完善带来器件特性的变化进行了分析。数值结果与有关文献的结果一致,验证了数值模拟的正确性。本文提出的二雏模拟器可用于半导体激光器的计算机辅助优化设计。

Two-Dimensional Numerical Simulation of a CSP Semiconductor Laser in Steady State

A channeled-substrate-planar (CSP) GaAs/GaAlAs semiconductor laser is simulated by a two-dimensional finite difference method (FDM) in steady state. In the analysis of electrical model, Gummel scheme is applied to the iterative calculation of the three electrical equations. Electrostatic potential, electron concentration and hole concentration are set as basic variables. Using the same finite difference mesh as that adopted in solving electrical equations, the optical equation is solved and the mode propagation constant for the optical equation is obtained with the general transverse resonance method combining with the variational principle. By a fully self-consistent iterative calculation, the entire electrical and optical behavior is investigated. Furthermore, the effect of the error of fabrication on the performance of the device is analyzed. Results agree well with the published data. The simulator can be applied to computer aided design of semiconductor laser.