低电阻率Si—C—O纤维制备

采用将聚二甲基硅烷与聚氯乙烯共裂解合成制备了Si－C－O纤维先驱体聚合物，并对其进行了表征。表明反应体系中聚氯乙烯含量较高时，生成的先驱体聚合物既有聚碳硅烷的结构特征，又具有－CH＝CH－共轭结构特征的－（SiCH3H-CH2)n（CH＝CH）m－共聚物。先驱体聚合物经熔融纺丝及NO2不熔化处理，高温烧成制得低电阻率Si－C－O（电阻率小于10^0Ω.cm），而通过聚碳硅烷制得的SiC纤维电阻率为10^6Ω.cm。结果表明能够从聚二甲基硅烷与聚氯乙烯共裂解出发制备低电阻率Si－C－O纤维。

Preparation of Si-C-O Fiber With Low Resistivity

Precursor polymers to manufacture Si-C-O fibers are prepared by thermal rearrangement reaction of Polyvinylchloride(PVC) and Polydimethylsilane.The precursor polymers are characterized by element analysis and IR.Test results show that the copolymer —(SiCH3H—CH2 )n—( CH＝CH).m— is obtained when high PVC content is added to reactive system.The Si-C-O fibers with low resistivity of 100 Ω·cm are obtained through melt spinning,infusibi-lization and heat treatment of the precusors at high temperature,while SiC fibers with high resistivity of 106Ω·cm may beobtained by polycarbosilanes.