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铁磁性纳米线阵列磁滞回线的模拟
引用本文:王秋芬,严慧羽,宋庆功.铁磁性纳米线阵列磁滞回线的模拟[J].中国民航学院学报,2006,24(4):52-54.
作者姓名:王秋芬  严慧羽  宋庆功
作者单位:中国民航大学理学院,天津300300
基金项目:中国民航大学校科研和教改项目
摘    要:讨论了铁磁性纳米线磁滞回线的特点及其影响因素,使用蒙特卡洛方法模拟了在周期性边界条件下的磁性纳米线阵列的磁滞回线,利用模拟的方法研究了不同长度的混乱度对平均长度相同的铁磁性纳米线阵列磁滞回线的影响。研究发现,铁磁性纳米线阵列的长度的混乱度越高,其磁滞回线的饱和磁场强度随着升高.剩余磁化强度则有所降低。

关 键 词:纳米线阵列  磁滞回线  蒙特卡洛模拟
文章编号:1001-5000(2006)04-0052-03
收稿时间:2006-06-02
修稿时间:2006-06-26

Simulation of Hysteresis Loop of Ferromagnetic Nanowire Arrays
WANG Qiu-fen,YAN Hui-yu,SONG Qing-gong.Simulation of Hysteresis Loop of Ferromagnetic Nanowire Arrays[J].Journal of Civil Aviation University of China,2006,24(4):52-54.
Authors:WANG Qiu-fen  YAN Hui-yu  SONG Qing-gong
Institution:Science College, CA UC , Tianjin 300300, China
Abstract:The paper studies the characteristics of the nanowire arrays. Under the cyclic boundary conditions, the hysteresis loop of the nanowire arrays is simulated by Monte Carlo method. The impact on the same average length of hysteresis loop of the nanowire arrays by the degree of disorder of different lengths of the nanowires is studied by stimulation for the first time. As a result, with the increase of the degree of disorder of length of the nanowire arrays, the saturation field increases and the remanenee decreases.
Keywords:nanowire arrays  hysteresis loop  Monte Carlo simulation
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