典型国产双极工艺宇航用稳压器单粒子闩锁效应研究

通过对某国产双极工艺宇航用稳压器进行不同LET值重离子辐照试验，实时监测器件输出电压的变化幅度和器件供电管脚电流，准确评估了器件抗单粒子效应性能。研究结果表明器件发生单粒子瞬态效应阈值小于5 MeV·cm 2·mg -1 ，当辐照重离子LET值增加至37.37 MeV·cm 2·mg -1 时，诱发器件产生单粒子闩锁效应，器件供电管脚电流由6 mA陡增至24 mA。在分析重离子试验数据的基础上，借助脉冲激光获得了器件内部单粒子效应敏感区域位置和结构特征。分析认为由于芯片内部多个功能模块共用一个隔离岛，同一个隔离岛内的器件之间形成的寄生PNP管与隔离岛内NPN管形成了PNPN可控硅结构，当入射重离子LET值足够大时将诱发寄生PNPN结构导通，进入闩锁状态。采用模拟软件Spectre实现了电参数级的瞬态故障注入模拟，复现了该双极工艺结构下单粒子闩锁效应现象。

Research on Single Event Latch up of Typical Domestic Bipolar Process Regulator for Aerospace

Through the different LET heavy ion irradiation test of domestic bipolar process step-down switching regulator used in satellites, the output voltage and current of the device measured during the experiment, we quantitatively evaluate the radiation resistance performance of the step-down switching regulator. The experimental results show that the single event upset threshold of this device is lower than 5 MeV·cm 2·mg -1 . When the LET value of the irradiated heavy ion increases to 37.37 MeV·cm 2·mg -1 , the single event latch-up occurs in the device, and the power supply current increases sharply from 6 mA to 24 mA. Based on the analysis of heavy ion radiation data, the position and structure characteristics of the sensitive region of single event effect in the device are obtained by means of the pulsed laser. The analysis shows that the parasitic PNP transistor is formed between the devices in the same isolation island and the PNPN thyristor structure is formed between the parasitic PNP and the NPN transistor in the isolation island due to the existence of multiple functional modules sharing a single isolation island inside the chip. When the LET value of the incident heavy ion is large enough, the parasitic PNPN structure will be turned on and latched. The simulation software Spectre is used to simulate the transient fault injection at electric parameter level, and the phenomenon of single event latch-up effect under bipolar structure is reproduced.