| 探针游移对方形四探针测试仪测量硅片薄层电阻的影响分析 |
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| 作者单位： | 河北工业大学廊坊分院 河北廊坊065000(苏双臣)，河北工业大学 天津300130(刘新福，张润利，刘金河) |
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| 摘 要： | 分析方形四探针探针游移对其测量微区薄层电阻的影响,完成了测试薄层电阻的公式的推导,对游移后产生的误差影响进行了统计数据分析,得出了测试结果满足测试误差要求的结论。
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| 关 键 词： | 硅片 薄层电阻 四探针方法 探针游移 测试误差 |
An Analysis of Affection upon Measuring Results Arising from the Wander of Probes by Four-Point Square Probe Instrument |
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| Authors: | SU Shuang-chen LIU Xin-fu ZHANG Run-li LIU Jin-he |
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| Institution: | SU Shuang-chen1 LIU Xin-fu2 ZHANG Run-li2 LIU Jin-he2 |
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| Abstract: | The influence of four-probe square probe vacillation is analyzed to the micro area sheet resistance.Inferential reasoning formula has been completed for the measurement sheet resistance.The statistical data is analyzed to the error influence by the wander of the four point square probe.The conclusion is obtained that the test result satisfies the test error request. |
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| Keywords: | silicon wafer sheet resistance four-point probe methods probe wander test error |
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