碳化硅反射镜材料性能预测

预测了反应烧结SiC（RBSiC）的物理及部分力学性能与游离Si含量的变化关系，并对预测值与测量值进行比较以验证其符合程度。经预测，随Si含量的增加，RBSiC的密度呈线性下降，尤其是气孔对材料密度的影响非常明显;线膨胀系数和热导率均应呈加速上升趋势，比热容稍有下降；各模量均有下降趋势。随着气孔的增加，RBSiC的膨胀量变化不明显，比热容和热导率均呈减速下降趋势。RBSiC测量值与预测值产生偏差是因为材料中Si含量的增加导致缺陷增多以及计算性能用数据有偏差所致，但预测仍能较符合RBSiC性能随Si含量变化趋势，因此认为预测值较为合理可作为性能参考值使用。

Properties Prediction of Silicon Carbide Material for Reflector

In this paper relationships of physical, thermal and partial mechanical properties of RBSiC with changing of Si content are predicted. Predicted and measured values are compared to evaluate their consistency . The prediction reveals that with the increase of Si the density of RBSiC decreases linearly and pore has especially great effect on density; thermal expansion coefficient and thermal conductivity increase rapidly, specific heat slightly decreases; modulus decreases. With the increase of pore content, thermal expansion coefficient changes little, thermal conductivity and specific heat decrease with slow trend. The difference between prediction and the actual is possible because flaws increase with increase of Si and the data have deviation in property calculation. The prediction can reveal the trend of RBSiC properties with increase of Si . So it is believed that prediction is reasonable and can be used as references.