双面抛光加工运动过程分析与数学模型的建立

晶片在双面抛光加工过程中具有多向运动、受力复杂、表面材料微细去除的特征,晶片的运动和受力是影响双面抛光加工质量的主要因素。本文通过分析双面抛光加工时晶片的运动规律和受力状态,建立了双面抛光加工时晶片运动的数学模型。研究结果表明,晶片的运动是行星运动和自转运动的合成,当晶片质量和惯性矩较小并可以忽略时,晶片的自转速度与抛光压力、抛光垫和晶片表面间的摩擦状态无关,而与行星轮和晶片端面间的摩擦状态、行星轮系统运动参数和抛光盘转速有关。

Motion Analysis for Double-Sided Polishing Process and Mathematical Model Establishing

Double-sided polishing process is a precise machining method for silicon wafers.It has the characteristics of the multi-directional motion,the complicated load and the tiny material removal.The wafer motion and the load in double-sided polishing process are main factors which affect the wafer surface quality.This paper discusses the wafer motion and the load in the double-sided polishing process,and estabishes a mathematical model based on the analysis of the motion and the load in wafers.Result shows that the motion of wafers is composed of the planet motion and the axial rotation motion.And the axial rotation speed of wafers is independent of the polishing pressure and the friction state between polishing pad and wafer surfaces,but it is related to the friction state between the planet wheel and the wafer edge,motion parameters of the planet wheel system,and the rotation speed of the polishing plate,when the mass and the moment of the wafer inertia are small to be ignored.