高功率微波极化方式与入射方向对微带线耦合特性影响分析

针对高功率微波（HPM）耦合效应分析需求,采用时域多分辨分析法（MRTD）模型,给出了微带线端口电压和电流方程,验证了模型的适用性。基于MRTD,仿真分析了HPM作为入射波时其极化方式、入射方向对微带线电磁耦合特性的影响。结果显示：垂直线极化波和平行线极化波耦合系数峰值出现在不同的频率,且峰值相差约15 dB,采用圆极化波时耦合系数最大;入射方向变化时,耦合系数以水平入射最小,垂直入射时最大,高频段微带线边缘有绕射现象产生。该分析采用了分析计算电大尺寸HPM耦合效应的MRTD数学模型,提高了HPM与复杂结构的耦合计算效率。

Coupling Calculation of Microstrip Line Influence by HPM Polarization and Incident Direction

To simulate the high power microwave （HPM） coupling onto the microstrip line, the multiresolution time domain （MRTI）） method was employed. The validity of the method was verified by comparison. The cou- pling mechanism of HPM onto the simple microstrip line was analyzed. Results showed that circular polarized wave coupling coefficient was the highest among three polarization; and the coupling coefficient of vertical polar- ization and parallel polarization wave peak value appeared in different frequencies; with changing of incident directiun, the coupling coefficient was minimal in parallel incidence and the largest in vertical incidence. Based on the MRTD mathematics model,this analysis method improved the coupling calculation of the HPM and com- plex structure.