质子单粒子效应引发卫星典型轨道下SRAM在轨错误率分析

利用中国原子能科学研究院100 Me V质子回旋加速器(CY CIAE-100)的单粒子效应辐照装置,测量了典型静态随机存储器(SRAM)的质子单粒子翻转截面;利用Space Radiation 7.0软件计算了卫星搭载该器件在典型轨道条件下运行的在轨错误率;同时研究了航天器在不同轨道高度、轨道倾角和屏蔽条件下对质子单粒子效应引发的在轨错误率的影响。计算结果表明:航天器运行于地球同步轨道高度及以下时,质子单粒子效应引发的在轨错误率均高于重离子的,最高可相差3个数量级左右。

Prediction of proton-induced single event effect on SRAM's in-orbit soft error rate on typical satellite orbit

A typical static random access memory (SRAM) is chosen for the single event effect testing with the 100 MeV proton cyclotron in China Institute of Atomic Energy (CIAE). The cross section for the single event upset under proton irradiation is measured, and the in-orbit soft error rate (SER) of the device used for typical satellite orbits is calculated by the Space Radiation 7.0 software. The influence of the orbit altitude, the orbit angle and the shielding condition on the in-orbit soft error rate is analyzed. It is shown that the SER single event effect (SEE) induced by proton is higher than that induced by heavy ions in the geosynchronous orbit. The SER induced by the proton SEE is up to three orders of magnitude higher than that induced by the heavy ion SEE