在片功率参数校准方法研究

针对在片功率参数的校准需求，分析如何通过矢量方法修正由于微波探针和功率计引入的失配误差，并推导相关修正公式。同时对在片功率测量矢量修正中涉及的微波探针S参数提取方法做介绍，并将试验提取的S参数与微波探针的出厂数据比较。最后将在片功率参数测量的矢量修正数据分别与标量修正数据和未修正数据比较，结果表明，在40GHz内，运用矢量修正得到的在片功率参数测量结果准确度较未修正结果提高0.4dB，较标量修正结果提高0.1dB。

Research on Calibration Method of On-wafer Power

For on-wafer power calibration, using a vector method to correct mismatch error introduced by microwave probe and power meter was proposed, and showed related formula. Then a method of extracting S parameters of a microwave probe was introduced, and compared the result with factory measurement data of the probe. Finally, the power measurement result using vector correction was compared with that of using scalar correction, showing that the at the frequency up to 40GHz, the accuracy of measurement result with vector correction is 0.4dB higher than without correction, and 0.1dB higher than scalar correction.