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GaAs太阳电池空间质子辐射损伤的分子动力学研究
引用本文:赵鹏飞,方美华,陈飞达,朱基聪.GaAs太阳电池空间质子辐射损伤的分子动力学研究[J].航天器环境工程,2017,34(3):247-251.
作者姓名:赵鹏飞  方美华  陈飞达  朱基聪
作者单位:南京航空航天大学 航天学院, 南京 210016;南京航空航天大学 航天学院, 南京 210016;南京航空航天大学 航天学院, 南京 210016;南京航空航天大学 航天学院, 南京 210016
基金项目:国家自然基金青年基金资助课题(编号:11405085);江苏省青年科学基金资助课题(编号:BK20130789);南京航空航天大学研究生创新基地开放基金资助课题(编号:kfjj20150602)
摘    要:GaAs太阳电池在空间辐射条件下的性能衰减与电池内部微观结构紧密相关。文章针对空间辐射带质子辐照GaAs材料,利用分子动力学方法研究由被辐射材料中产生的不同能量(0.1~10 ke V)初级离位原子(PKA)引起的级联碰撞过程,分析缺陷随辐照时间、入射PKA能量的演化规律,探讨点缺陷和缺陷簇的形成特征。研究发现,在GaAs材料的缺陷对数目随时间的演化曲线中,在"离位峰"和稳定状态时,缺陷对数目与PKA能量呈一定的线性关系;PKA能量越高,辐射损伤越严重、越不易恢复,但缺陷复合率随能量升高趋于饱和;点缺陷在GaAs中主要以缺陷簇的方式存在,且随着能量的升高,孤立缺陷倾向于缔合成缺陷簇。

关 键 词:GaAs太阳电池  空间辐射  级联碰撞  微观缺陷  分子动力学  理论研究  仿真分析
收稿时间:2016/10/18 0:00:00
修稿时间:2017/5/14 0:00:00

Molecular dynamics simulation on radiation damages of GaAs solar cells caused by spatial protons
ZHAO Pengfei,FANG Meihu,CHEN Feida and ZHU Jicong.Molecular dynamics simulation on radiation damages of GaAs solar cells caused by spatial protons[J].Spacecraft Environment Engineering,2017,34(3):247-251.
Authors:ZHAO Pengfei  FANG Meihu  CHEN Feida and ZHU Jicong
Institution:College of Aeronautics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Aeronautics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Aeronautics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Aeronautics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
Abstract:The performance degradation of GaAs solar cells under the conditions of space radiation is closely related to the microstructure of the cells. Based on the molecular dynamics, this paper studies the collision cascade process caused by the PKA, generated by the protons in the spatial capture zone and with different energies(0.1 to 10 keV). We analyze the evolution of the defects against the time and the energy of the PKA, as well as the formation characteristics of the point defects and the defect clusters. A certain linear relationship is shown to exist between the number of Frenkel pairs and the PKA energies at the "displacement spike" and in the steady state; the higher the PKA energy is, the more serious the radiation damages will be, and the defects are harder to recover, but the recombination rate of the defects tends to saturate; the point defects in the GaAs exist mainly in the form of defect clusters, and with the increase of the PKA energy, the isolated defects tend to associate with the defect clusters.
Keywords:GaAs solar cells  space radiation  cascade collision  microscopic defects  molecular dynamics  theoretical study  simulation analysis
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