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Vertical cavity surface emitting lasers offer many features that are suitable for applications in optical interconnect, optical data bus, optical backplane, and optical signal processing. The authors describe basic device structure and fabrication techniques of GaAs-based vertical cavity surface emitting lasers and discuss key laser performance characteristics such as emission wavelength, beam pattern, threshold current, power output, quantum efficiency, and modulation response that are important to these potential applications. Results on monolithic integration of the laser with an n-channel MESFET driver are described 相似文献
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