| 工艺参数对SiC单晶片切割表面质量的影响 |
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| 引用本文： | 王肖烨,李言,李淑娟,袁启龙,杨明顺.工艺参数对SiC单晶片切割表面质量的影响[J].宇航材料工艺,2012,42(3):59-62,67. |
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| 作者姓名： | 王肖烨 李言 李淑娟 袁启龙 杨明顺 |
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| 作者单位： | 1. 西安理工大学机械与精密仪器工程学院,西安 710048;宝鸡文理学院机电工程系,宝鸡 721007
2. 西安理工大学机械与精密仪器工程学院,西安,710048 |
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| 基金项目： | 国家自然科学基金资助项目，陕西省科技攻关基金资助项目，宝鸡文理学院院级重点项目，陕西省教育厅重点资助项目 |
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| 摘 要： | SiC单晶片表面质量对其后续半导体器件的制造有很大影响,但其材料的高硬度和高脆性,使切片过程变得非常困难。本文在往复式电镀金刚石线切割装置上采用单因素和正交法进行了SiC单晶切割实验,研究了工件转速、线锯速率、工件进给速率、线锯磨损对晶片表面粗糙度的影响规律以及三维形貌特点。结果表明:附加工件旋转运动,晶片表面质量提高,划痕减少、深度变浅;线速增大、工件旋转速率增大或工件进给速率减小,表面粗糙度值减小;线锯磨损晶片表面粗糙度值增大。相对线速和线锯磨损,工件转速和工件进给速率对晶片表面质量及粗糙度的影响更大。应在综合考虑效率和线锯损耗的基础上合理确定切割参数,尤其是工件进给速率。
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| 关 键 词： | 金刚石线锯 工件旋转 SiC单晶片 工艺参数 表面质量 |
Influence of Process Parameters on SiC Wafers Surface Quality |
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| Wang Xiaoye
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Li Yan
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Li Shujuan
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Yuan Qilong
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Yang Mingshun.Influence of Process Parameters on SiC Wafers Surface Quality[J].Aerospace Materials & Technology,2012,42(3):59-62,67. |
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| Authors: | Wang Xiaoye Li Yan Li Shujuan Yuan Qilong Yang Mingshun |
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| Affiliation: | 1(1 Faculty of Mechanical and Precision Instrument Engineering,Xi’an University of Technology,Xi’an 710048)(2 Baoji University of Arts and Science Electronic and Mechanical Engineering Department,Baoji 721007) |
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| Abstract: | Surface quality of SiC wafers has a great influence on its subsequent semiconductor device manufacturing,however,SiC cut processing is very difficult because of its high hardness and high brittleness.Based on reciprocating electroplated diamond wire saw cutting single-crystal SiC experiments and the combinations of sawing parameters are designed by using the one-factor and the orthogonal method.The influences of work-piece rotating rate,wire saw feeding rate,and work-piece feeding rate and wire saw wear on wafers surface roughness and 3-d topography characteristic was studied.The results indicate that wafers surface quality improvement,and scratches reduce and becomes shallow depth when additional work-piece rotation movement;the surface roughness decreases with the work-piece rotating rate,wire saw rate,decrease of work-piece feeding rate,and the surface roughness increases with the wire saw wear;the influence is much more of work-piece rotating rate and work-piece feeding rate on the wafers surface quality and roughness compare with wire saw rate and wire saw wear;It should reasonably determine the cutting parameters,especially work-piece feed rate based on the comprehensively considered cutting efficiency and loss of wire saw. |
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| Keywords: | Diamond wire saw Work-piece rotates SiC wafers Process parameters Surface quality |
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