| 脉冲激光诱发65 nm体硅CMOS加固触发器链的单粒子翻转敏感度研究 |
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| 引用本文： | 李赛,陈睿,韩建伟,马英起,上官士鹏,李悦,朱翔,梁亚楠,王璇.脉冲激光诱发65 nm体硅CMOS加固触发器链的单粒子翻转敏感度研究[J].航天器环境工程,2021,38(1):55-62. |
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| 作者姓名： | 李赛 陈睿 韩建伟 马英起 上官士鹏 李悦 朱翔 梁亚楠 王璇 |
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| 基金项目： | 国家自然科学基金项目（编号:11875060，11705228）；激光推进及其应用国家重点实验室开放基金项目（编号:SKLLPA-20） |
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| 摘 要： | 针对65 nm体硅CMOS工艺触发器链，利用脉冲激光研究了敏感节点间距、加固结构和测试数据类型等因素对电路的单粒子翻转效应（SEU）敏感度的影响。研究表明:敏感节点间距增大可有效提高双互锁存（dual interlocked storage cell, DICE）结构触发器链的抗SEU性能，但当敏感节点间距较大（如＞4.0 μm）时，间距增大的器件加固效果减弱；触发器单元中NMOS管经保护漏结构加固、PMOS管经保护环结构加固后其SEU敏感度明显降低；不同数据测试模式下触发器链的SEU敏感度不同，这可能与不同模式下单元中的敏感晶体管类型不同有关。此外，脉冲激光作为一种地面模拟手段，可有效用于确定单粒子敏感器件设计的最佳间距和验证防护效果。
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| 关 键 词： | 单粒子翻转 脉冲激光 敏感节点间距 保护环 保护漏 |
| 收稿时间： | 2020-05-08 |
Sensibility of single event upset of hardened D flip-flop chain in 65 nm bulk silicon CMOS irradiated by pulsed laser |
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| Affiliation: | 1.National Space Science Centre, Chinese Academy of Sciences, Beijing 100190, China2.University of Chinese Academy of Sciences, Beijing 100049, China3.State Key Laboratory of Laser Propulsion & Application, Aerospace Engineering University, Beijing 101416, China |
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| Abstract: | The influence of the distance between the sensitive nodes, the hardening structure, and the test data mode on the single-event-upset (SEU) sensitivity of the D flip-flop chain fabricated with 65 nm bulk silicon CMOS technology are studied by using the pulsed laser. The experimental results show that the increase of the distance between the sensitive nodes can effectively improve the resistance against the SEU of the DFF with dual interlocked storage cell(DICE) structure, but the good effect will be reduced when the spacing is larger than 4 μm. Besides, the SEU sensitivity of the DFF hardened by the guard ring (for the PMOS transistor) or by the guard drain (for the NMOS transistor) is found to be significantly reduced. It is also found that the SEU sensitivity of the DFF chain varies with the test data mode, suggesting a dependence of the type of the sensitive transistor in the DFF under different test modes. In addition, the pulsed laser, as a ground simulation method, can be used to effectively determine the optimal spacing in the design of the SEU sensitive devices and to verify the related protective effects. |
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