| 高能电子辐照引起的纳米器件翻转效应研究 |
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| 引用本文： | 吕贺,张洪伟,梅博,李鹏伟,莫日根,孙毅.高能电子辐照引起的纳米器件翻转效应研究[J].航天器环境工程,2021,38(3):358-363. |
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| 作者姓名： | 吕贺 张洪伟 梅博 李鹏伟 莫日根 孙毅 |
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| 作者单位： | 1.中国航天宇航元器件工程中心 |
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| 基金项目： | 国家自然科学基金项目（编号:61634008，11805271，11875068） |
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| 摘 要： | 随着电子器件特征尺寸的减小，其翻转阈值也在降低，使得空间中的高能电子或可诱发纳米器件产生翻转效应。文章选用28 nm的V7型FPGA作为研究对象，分别采用能量为0.2 MeV和1.5 MeV、注量率为5×108～1×109/(cm2·s)的电子进行辐照，结果表明试件产生了明显的翻转效应。结合高能电子作用28 nm器件的仿真结果，经分析可知，1.5 MeV能量的单个电子与器件碰撞不能发生核反应；针对高能电子诱发器件存储单元翻转的几种可能机理，初步认为该器件的翻转是由多个电子同时作用到其中形成局部电荷累积导致的。因此可见，对于电子能量高、通量大的木星等星体的辐射带环境，需考虑高能电子诱发纳米器件翻转对航天器的影响。
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| 关 键 词： | 高能电子 纳米器件 单粒子翻转 电子加速器 |
| 收稿时间： | 2021-03-04 |
Research of the upset effect on nanodevices caused by high energy electron irradiation |
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| Affiliation: | 1.China Aerospace Component Engineering Center2.National Innovation Center of Radiation Application: Beijing 100029, China |
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| Abstract: | With the decrease of the feature size of the electronic devices, the upset threshold also decreases, thus, the high-energy electrons in the space may induce the single event upset in nanodevices. In this paper, a 28 nm V7 FPGA is selected as the test object, to be irradiated by electrons with the energies of 0.2 MeV and 1.5 MeV and the injection rate of 5×108 - 1×109/(cm2·s), respectively. It is shown that the specimen is significantly affected by the upset under the action of the high-energy electrons. In view of the simulation results of the high-energy electrons acting on the 28 nm devices, it can be deduced that a single electron with 1.5 MeV energy cannot cause a nuclear reaction by colliding with the device, to induce a single event upset by itself. The upset effect is probably induced by multiple electrons acting simultaneously on a single tube resulting in an accumulation of the electric charge. Therefore, for the environment on the radiation belt of Jupiter and other stars with high energy and high flux electrons, it is necessary to consider the impact of high-energy electron induced nanodevice upsets on the spacecraft. |
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